SGH40N60UFTU

The SGH40N60UFTU from On Semiconductor is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a robust 600V voltage rating and a continuous current capability of 40A, making it suitable for power switching and control circuits.

With a power dissipation of 160W, the SGH40N60UFTU is engineered for efficiency and reliability. It operates within a temperature range of -55°C to 150°C (TJ), ensuring stable performance under various environmental conditions. The transistor's Vce(on) is rated at a maximum of 2.6V at 15V Vge and 20A Ic, with a gate charge of 97 nC.

Packaged in a TO-3P-3 or SC-65-3 configuration, this device is designed for through-hole mounting, facilitating integration into existing circuit designs. The standard input type and specified switching characteristics, including Td(on) of 15ns/65ns and switching energy of 160µJ (on) / 200µJ (off), provide engineers with critical data for performance optimization.

This IGBT transistor is suitable for a wide range of industrial and power electronics applications where high voltage and current handling are essential. Its construction and specifications support reliable operation in power supplies, motor drives, and other high-power conversion systems.