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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
161 pcs
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161 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Turn-Off Switching Energy (Eoff) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGPF10N60UNDF is a single NPT (Non-Punch Through) IGBT manufactured by On Semiconductor. It is designed for medium-power switching applications, featuring a maximum collector-emitter voltage (Vces) of 600V and a maximum collector current (Ic) of 20A. The device has a maximum power dissipation of 42W.
Key electrical characteristics include a typical gate charge (Qg) of 37 nC and a collector-emitter saturation voltage (Vce(on)) of 2.45V maximum at Vge=15V and Ic=10A. Switching performance is characterized by typical turn-on and turn-off delay times of 8 ns and 52.2 ns respectively, with typical switching energies of 150 µJ (Eon) and 50 µJ (Eoff) under test conditions of 400V, 10A, 10 Ohm, and 15V. The device also features a typical reverse recovery time (trr) of 37.7 ns.
The FGPF10N60UNDF is packaged in a TO-220-3 Full Pack (TO-220F-3) case, which provides isolation and is suitable for through-hole mounting. It has a standard input type and an operating junction temperature range of -55°C to 150°C.
The maximum collector-emitter voltage (Vces) is 600V.
The maximum collector current (Ic) is 20A.
It is available in a TO-220-3 Full Pack (TO-220F-3) package for through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, though this data is unverified.