Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
|
300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Vce(on) @ Vge, Ic | |
| Voltage |
The SGH20N60RUFDTU from On Semiconductor is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component features a robust 600V collector-emitter voltage and a continuous collector current rating of 32A, with a power dissipation of 195W.
Key electrical characteristics include a saturation voltage of 2.8V at 15V gate-emitter voltage and 20A collector current. It also has a gate charge of 55 nC and switching times (turn-on delay) of 30ns/48ns with switching energies of 524µJ (on) and 473µJ (off). The reverse recovery time is specified at 95 ns.
This IGBT is housed in a TO-3P package, identified as TO-3P-3 or SC-65-3, and is designed for through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ).
The SGH20N60RUFDTU is suitable for various power electronics designs requiring efficient switching and high voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
32A.
195W.
2.8V maximum at 15V gate voltage and 20A collector current.
-55°C to 150°C junction temperature.
TO-3P-3 and SC-65-3, through-hole mounting.
55nC.