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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
656 pcs
|
656 pcs | On Request | 1 | On Request | On Request | 10+17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA50N100BNTD2 is a single NPT and Trench IGBT from ON Semiconductor. It features a collector-emitter breakdown voltage of 1000V and a maximum collector current of 50A, with a maximum power dissipation of 156W. The device has a typical Vce(on) of 2.9V at 15V gate voltage and 60A collector current, and a gate charge of 257 nC.
Switching characteristics include a turn-on delay of 34ns and turn-off delay of 243ns, with a reverse recovery time of 75ns. The IGBT is designed for through-hole mounting and is supplied in a TO-3P-3 / SC-65-3 package, with a supplier device package of TO-3P. Operating junction temperature range is -55°C to 150°C.
This component is suitable for applications requiring high voltage and current handling in a standard input type configuration. The test condition for switching parameters is 600V, 60A, 10 Ohm, 15V.
The maximum collector-emitter breakdown voltage (Vces) is 1000V.
The maximum collector current (Ic) is 50A.
The maximum power dissipation is 156W.
It comes in a TO-3P-3 / SC-65-3 package (through-hole), with supplier device package TO-3P.
The operating junction temperature range is -55°C to 150°C.
The maximum Vce(on) is 2.9V at Vge=15V and Ic=60A.
The gate charge (Qg) is 257 nC.