NGTG35N65FL2WG The ON Semiconductor NGTG35N65FL2WG is a Field Stop II IGBT Transistor designed for demanding switching applications. It offers a 650V collector-emitter voltage and 70A continuous collector current.
Mfr Part #:

NGTG35N65FL2WG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NGTG35N65FL2WG is a Field Stop II IGBT Transistor designed for demanding switching applications. It offers a 650V collector-emitter voltage and 70A continuous collector current.
Total Stock: 200 pcs
$ Price Range: $0.99

NGTG35N65FL2WG Available from 1 distributor

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NGTG35N65FL2WG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ TC=100 °C)
Collector Current (Maximum @ TC=25 °C)
Collector Emitter Saturation Voltage (Maximum @ VGE = 15 V, IC = 35 A, TJ = 175 °C)
Collector Emitter Saturation Voltage (Typical @ VGE = 15 V, IC = 35 A)
Collector-Emitter Voltage
Continuous Collector Current Ic Max
Current
Gate Charge
Gate-Emitter Leakage Current
Gate-Emitter Voltage
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Power Dissipation (@ TC = 25 °C)
Power Dissipation (@ Tc=100 °C)
Storage Temperature
Supplier Device Package
Switching Energy
Switching Energy (On)
Switching Energy (off)
Td (on
Test Condition
Thermal Resistance - Junction to Case
Vce(on) (Max) @ Vge, Ic
Voltage

NGTG35N65FL2WG Description

Short technical summary and product information.

The ON Semiconductor NGTG35N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) featuring a Field Stop II Trench construction. This design provides superior performance with low on-state voltage and minimal switching loss, making it suitable for applications like solar inverters and uninterruptible power supplies (UPS).

 

Key electrical specifications include a 650V collector-emitter voltage and a continuous collector current of 70A at 25°C, derating to 35A at 100°C. The device supports a maximum power dissipation of 300W at 25°C. It operates within a junction temperature range of -55°C to +175°C.

 

This IGBT is optimized for high-speed switching and features a short-circuit withstand time of 5µs. The package is a standard TO-247-3, mounted via through-hole. The NGTG35N65FL2WG is a Pb-Free device, indicating compliance with environmental regulations.

NGTG35N65FL2WG Quick Information

Product Type: IGBT Transistor
Canonical Name: NGTG35N65FL2WG IGBT Transistor
Subcategory: Single

NGTG35N65FL2WG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NGTG35N65FL2WG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NGTG35N65FL2WG Features

  • 650V collector-emitter voltage rating.
  • 70A continuous collector current capability.
  • 300W maximum power dissipation.
  • Optimized for high-speed switching.
  • TO-247-3 package for through-hole mounting.

NGTG35N65FL2WG Applications

  • Suitable for high-voltage switching applications.
  • Ideal for UPS and solar inverter systems.
  • Used in industrial motor control circuits.
  • Applicable in welding power supplies.
  • Suitable for demanding power switching environments.

NGTG35N65FL2WG FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the NGTG35N65FL2WG?

The collector-emitter voltage for the NGTG35N65FL2WG is 650V.

What is the continuous collector current of the NGTG35N65FL2WG?

The continuous collector current is 70A at 25°C and 35A at 100°C.

What is the maximum power dissipation for this IGBT?

The maximum power dissipation is 300W at 25°C.

What is the operating temperature range for the NGTG35N65FL2WG?

The operating junction temperature range is -55°C to +175°C.

What package type is the NGTG35N65FL2WG supplied in?

The NGTG35N65FL2WG is supplied in a TO-247-3 package.

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