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STGWT60H65DFB The STMicroelectronics STGWT60H65DFB is a Trench Field Stop IGBT transistor with a 650V rating, 80A current capability, and 375W power dissipation. It is designed for through-hole mounting.
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STGWT60H65DFB

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGWT60H65DFB is a Trench Field Stop IGBT transistor with a 650V rating, 80A current capability, and 375W power dissipation. It is designed for through-hole mounting.
✓ Total Stock: 330 pcs
$ Price Range: $4.16

STGWT60H65DFB Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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330 pcs
On Request
330 pcs On Request 1 On Request On Request 21+ On Request On Request
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STGWT60H65DFB Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Supplier Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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STGWT60H65DFB Description

Short technical summary and product information.

The STMicroelectronics STGWT60H65DFB is a single IGBT transistor from the Trench Field Stop family. It offers a high breakdown voltage of 650V and a continuous collector current of 80A, with a power dissipation of 375W. The device features a Vce(on) of 2V at 15V and 60A, and includes switching energy values of 1.09mJ (on) and 626µJ (off).

 

Designed for through-hole mounting, this IGBT comes in a TO-3P-3, SC-65-3 package. Its operating temperature range is -55°C to 175°C (TJ). Key electrical characteristics include a gate charge of 306 nC and a reverse recovery time of 60 ns. The Td(on)/Tf(on) is specified at 51ns/160ns under test conditions of 400V, 60A, 5Ohm, and 15V.

 

This component is suitable for various power switching applications where high voltage and current handling are required. Its robust construction and specified performance parameters make it a reliable choice for demanding electronic designs.

STGWT60H65DFB Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGWT60H65DFB IGBT
Subcategory: IGBT

STGWT60H65DFB Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGWT60H65DFB Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGWT60H65DFB Features

  • Trench Field Stop IGBT technology.
  • High voltage rating of 650V.
  • Continuous current of 80A.
  • 375W power dissipation.
  • Through hole mounting in TO-3P-3 package.

STGWT60H65DFB Applications

  • Power supply circuits.
  • Motor control applications.
  • Industrial power systems.
  • Switching power supplies.

STGWT60H65DFB FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the STGWT60H65DFB?

The maximum collector-emitter voltage is 650V.

What is the maximum collector current rating?

The maximum collector current is 80A.

What is the package type of the STGWT60H65DFB?

It is available in a TO-3P-3 (SC-65-3) through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the typical Vce(on) at 15V and 60A?

The typical Vce(on) is 2V at 15V gate voltage and 60A collector current.

What is the gate charge of the STGWT60H65DFB?

The gate charge is 306 nC.

What is the reverse recovery time?

The reverse recovery time is 60 ns.

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