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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
794 pcs
|
794 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Eoff) | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA5065ADF is a single N-channel IGBT from ON Semiconductor utilizing Trench Field Stop technology. It is rated for a collector-emitter voltage of 650V and a continuous collector current of 100A. The device features a low saturation voltage of 2.2V typical at 15V gate drive and 50A collector current. Switching performance is characterized by a turn-on energy of 1.35mJ and turn-off energy of 309µJ under test conditions of 400V, 50A, 6Ω gate resistance, and 15V gate drive. The total gate charge is 72.2nC. The IGBT is housed in a TO-3P-3 (SC-65-3) package with a TO-3PN supplier device package designation and is designed for through-hole mounting. The operating junction temperature range is -55°C to 175°C. Maximum power dissipation is 268W.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.72 | $1.72 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
100A.
2.2V at Vge=15V, Ic=50A.
TO-3P-3, SC-65-3 (supplier device package TO-3PN), through-hole mounting.
-55°C to 175°C (junction temperature).
72.2nC.