HGTP10N120BN The HGTP10N120BN is a 1200V, 35A NPT IGBT from On Semiconductor with 298W power dissipation, housed in a through-hole TO-220-3 package.
Mfr Part #:

HGTP10N120BN

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The HGTP10N120BN is a 1200V, 35A NPT IGBT from On Semiconductor with 298W power dissipation, housed in a through-hole TO-220-3 package.
Total Stock: 820 pcs
$ Price Range: $8.04

HGTP10N120BN Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
20 pcs
20 pcs On Request 1 On Request On Request On Request On Request On Request

HGTP10N120BN Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

HGTP10N120BN Description

Short technical summary and product information.

The HGTP10N120BN is a single NPT (Non-Punch Through) IGBT designed for high-voltage switching applications. It features a collector-emitter voltage rating of 1200V and a continuous collector current rating of 35A, with a maximum power dissipation of 298W.

 

Key electrical characteristics include a low saturation voltage of 2.7V at 15V gate-emitter voltage and 10A collector current. Typical switching energies are 320 µJ (turn-on) and 800 µJ (turn-off) under test conditions of 960V, 10A, and 10 Ohm gate resistance. Fast switching is supported with typical turn-on delay of 23 ns and turn-off delay of 165 ns. The device has a total gate charge of 100 nC, facilitating efficient gate drive design.

 

The HGTP10N120BN is packaged in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks and integration into power circuits. Its operating junction temperature range is -55°C to 150°C. This device is RoHS3 compliant and classified with MSL 1 (Unlimited), ensuring reliability in various environments. It is commonly used in motor drives, power supplies, and induction heating applications.

HGTP10N120BN Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: HGTP10N120BN NPT IGBT 1200V 35A 298W
Subcategory: NPT IGBT

HGTP10N120BN Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

HGTP10N120BN Estimated Pricing

Qty Low High
800+ $8.04 $8.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTP10N120BN Features

  • 1200V collector-emitter voltage rating.
  • 35A continuous collector current capability.
  • 298W maximum power dissipation.
  • Low 2.7V saturation voltage at 15V gate drive.
  • Fast 23 ns turn-on and 165 ns turn-off delays.

HGTP10N120BN Applications

  • Used in motor drive and inverter circuits.
  • Suitable for uninterruptible power supplies (UPS).
  • Ideal for induction heating applications.
  • Used in high-voltage power switching stages.

HGTP10N120BN FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the HGTP10N120BN?

The maximum collector-emitter voltage (Vce) is 1200 V.

What is the continuous collector current rating?

The continuous collector current (Ic) is 35 A.

What is the power dissipation capability?

The maximum power dissipation is 298 W.

What is the package type of this IGBT?

The HGTP10N120BN is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

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