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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
347 pcs
|
347 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Fall Time | |
| Gate Charge | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGT1S7N60C3DS9A is an N-channel IGBT from On Semiconductor, part of the UFS Series, rated for 600V collector-emitter voltage and 14A continuous collector current. It integrates an anti-parallel hyperfast diode for efficient switching. Key electrical characteristics include a typical gate charge of 23nC, a maximum Vce(on) of 2V at 15V gate-emitter voltage and 7A collector current, and switching energies of 165µJ (on) and 600µJ (off) under test conditions of 480V, 7A, 50Ω, and 15V. The typical fall time is 140ns at 150°C junction temperature, and the reverse recovery time is 37ns. The device is housed in a surface-mount TO-263-3 (D²Pak) package, suitable for automated assembly. It is designed for moderate-frequency high-voltage switching applications such as AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
| Qty | Low | High |
|---|---|---|
| 117+ | $2.58 | $2.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
14A at TC = 25°C.
60W.
23nC.
140ns at TJ = 150°C.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.
RoHS3 compliant (unverified).