| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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660 pcs
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660 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| IGBT Type | |
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| Vce(on) (Max) @ Vge, Ic | |
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The ON Semiconductor NGTB40N65FL2WG is an IGBT Transistor featuring Trench Field Stop technology for superior performance in demanding switching applications. It offers a robust 650V collector-emitter voltage and an 80A continuous collector current at 25°C, with a power dissipation of 366W. The device operates across a wide temperature range from -55°C to 175°C.
This IGBT is optimized for high-speed switching and includes a soft, fast co-packaged free-wheeling diode with a low forward voltage. Its construction provides both low on-state voltage and minimal switching loss, making it suitable for applications such as solar inverters and uninterruptible power supplies (UPS).
The NGTB40N65FL2WG comes in a TO-247-3 package and is mounted via a through-hole method. Key electrical characteristics include a VCEsat of 2V at 15V/40A and a short-circuit withstand time of 5µs. The device is also Pb-Free compliant.
This component is well-suited for power electronics designs requiring efficient and reliable switching performance. Its specifications make it a strong candidate for use in inverters, power supplies, and other high-power applications where thermal management and switching speed are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650 V.
The continuous collector current at 25°C is 80 A.
The power dissipation is 366 W at 25°C.
The operating temperature range is -55°C to 175°C (TJ).
The NGTB40N65FL2WG is supplied in a TO-247-3 package.