Transistors - IGBTs - Single DistyParts

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Transistors - IGBTs - Single facilitate efficient power control in electronic circuits. Key attributes include Current, Gate Charge, and IGBT Type. These components are essential for applications such as new product design and prototyping.

What are Transistors - IGBTs - Single ?

Transistors - IGBTs - Single are semiconductor devices used for switching and amplifying electronic signals. They are commonly utilized in applications like production electronics assembly and maintenance. Important specifications for selection include Current, which determines the maximum load the transistor can handle; Gate Charge, which affects the switching speed and efficiency; and Operating Temperature, crucial for ensuring reliability in various environments. Procurement teams should validate lifecycle status and consider alternate-source options to mitigate sourcing risks.

Part & Mfr

Total Stock

Pricing & RFQ

AEC Qualified

AEC-Q101

Automotive Grade

Avalanche Energy

Breakdown Voltage

Capacitance

Clamped Inductive Load Current

Collector - Emitter Saturation Voltage

Collector Current (@ TC = 100 °C)

Collector Current (Continuous, TC=110°C)

Collector Current (DC) (Maximum @ Tc=100 °C)

Collector Current (Ic)

Collector Current (Maximum @ TC = 110 °C)

Collector Current (Maximum @ TC=100 °C)

Collector Current (Maximum @ TC=25 °C)

Collector Current (Maximum @ TC=90 °C)

Collector Current (Maximum)

Collector Current (Nominal @ TC = 100 °C)

Collector Current (Nominal)

Collector Current (Pulsed)

Collector Current - Continuous

Collector Current Continuous (Maximum @ TC=110 °C)

Collector Current Continuous (Nominal @ Tc=100 °C)

Collector Current Pulsed (ICM)

Collector Cut-Off Current

Collector Cut-Off Current (ICES)

Collector Cutoff Current (Maximum @ Vge = 0 V, Vce = 1200 V)

Collector Cutoff Current (Maximum @ Vge = 0 V, Vce = 1200 V, Tj = 175 °C)

Collector Emitter Cut Off Current (Maximum @ VGE = 0 V, VCE = 600 V, TJ = 150 °C)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V, TJ = 175 °C)

Collector Emitter Saturation Voltage (Typical @ Tvj=25 °C)

Collector Emitter Saturation Voltage (Typical)

Collector Emitter Saturation Voltage (Typical/Maximum @ Vge = 15 V, Ic = 20 A)

Collector Emitter Voltage (Maximum)

Collector To Emitter Saturation Voltage (Typical @ IC = 15 A, VGE = 15 V)

Collector To Emitter Saturation Voltage (Typical @ IC = 24 A, VGE = 15 V)

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage (BVCES)

Collector-Emitter Cut-off Current

Collector-Emitter Cutoff Current

Collector-Emitter Saturation Voltage (Typical @ IC=30 A, VGE=15 V, TC=125 °C)

Collector-Emitter Saturation Voltage (Typical @ IC=40 A, VGE=15 V)

Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=75 A, VGE=15 V)

Collector-Emitter Saturation Voltage (Vce Sat)

Collector-Emitter Voltage

Collector-Emitter Voltage (VCES)

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Leakage Current

Collector-to-Emitter Voltage (Vces)

Continuous Collector Current

Continuous Collector Current (Maximum @ 25 °C)

Continuous Collector Current (Maximum @ TC = 100 °C)

Continuous Collector Current (Maximum @ TC = 25 °C)

Continuous Collector Current (Maximum)

Current

Current (Maximum)

Current (Unspecified condition)

Current - Collector (Ic) (Max)

Current - Collector Pulsed (Icm)

Current - Collector, pulsed

Current Collector (Maximum @ TC = 100 °C)

Current Collector (Maximum @ TC = 25 °C)

Current Diode Forward (Maximum @ TC = 100 °C)

Current Diode Forward (Maximum @ TC = 25 °C)

Current Pulsed (Maximum @ Tpulse limited by TJmax)

Current Pulsed (Maximum)

DC Collector Current (Maximum @ Tc=100 °C)

Die Size

Diode Continuous Forward Current

Diode Continuous Forward Current (Maximum @ TC=100 °C)

Diode Continuous Forward Current (Maximum @ TC=25 °C)

Diode Continuous Forward Current @ TC=100°C

Diode Forward Current (Maximum @ TC=100 °C)

Diode Forward Current (Maximum @ TC=25 °C)

Diode Forward Current (Nominal @ TC = 100 °C)

Diode Forward Current (Nominal @ TC = 25 °C)

Diode Forward Current (TC=25°C)

Diode Forward Voltage

Diode Maximum Forward Current

Diode Pulsed Current

Diode thermal resistance, junction – case

Emitter-Collector Breakdown Voltage

Factory Pack Quantity

Failure Rate

Fall Time

Fall Time (Typical @ TJ=150°C)

Fall Time (Typical)

Fall Time (tf)

Fall Time (tfi)

Forward Transconductance

Forward Transconductance (gfe)

G-E Leakage Current

G-E Threshold Voltage

Gate Charge

Gate Charge (Unspecified condition)

Gate Leakage Current

Gate Threshold Voltage

Gate Threshold Voltage (Vge(th))

Gate to Emitter Leakage Current

Gate to Emitter Threshold Voltage

Gate-Collector Charge (Qgc)

Gate-Emitter Charge

Gate-Emitter Charge (Qge)

Gate-Emitter Leakage Current

Gate-Emitter Leakage Current (IGES)

Gate-Emitter Threshold Voltage

Gate-Emitter Threshold Voltage (Vge(th))

Gate-Emitter Voltage

Gate-Emitter Voltage (Continuous)

Gate-Emitter Voltage (Maximum)

Gate-Emitter Voltage (VGES)

Gate-to-Emitter Voltage

Gate-to-Emitter Voltage (VGES)

Gate-to-Emitter Voltage (Vge)

Halogen Free

Height

IC (Maximum @ TC=100 °C)

IC (Maximum @ Tc=25 °C)

IC (Nominal @ TC = 25 °C)

IC (Nominal @ TC=100 °C)

IF (Maximum @ TC=100 °C)

IF (Maximum @ TC=25 °C)

IGBT Type

IGBT thermal resistance, junction – case

Ic (@ TC = 110 °C)

Ic (Maximum @ TC = 110 °C)

Ic (Nominal @ Tc=110 °C)

Ic Continuous (Maximum @ Tc=100 °C)

Ic Continuous (Nominal @ Tc=100 °C)

Industrial Grade

Input Capacitance

Input Capacitance (Cies)

Input Type

Internal Emitter Inductance (LE)

Junction Temperature Max

Junction to Case Thermal Resistance

Junction-to-Case Thermal Resistance (Diode)

Junction-to-Case Thermal Resistance (IGBT)

Lead Soldering Temperature

Lead Spacing

Lead Style

Lead Temperature for Soldering

Leakage Current (Maximum @ VCE = 0, VGE = ± 20 V)

Length

Maximum Collector to Emitter dv/dt

Maximum Gate Emitter Voltage

Maximum Junction Temperature

Maximum Junction Temperature (TJ)

Maximum Lead Temp. for Soldering

Maximum Lead Temperature

Maximum Lead Temperature for Soldering

Maximum Operating Temperature

Maximum Power Dissipation (Maximum @ TC=100 °C)

Maximum Power Dissipation (Maximum @ T_C=100 °C)

Medical Grade

Minimum Operating Temperature

Mounting Style

Mounting Torque

Mounting Type

Nominal Current

Number of Pins

Operating Junction Temperature

Operating Junction Temperature Range

Operating Temperature

Operating Temperature (Minimum/Maximum)

Operating Temperature - Maximum

Output Capacitance

Output Capacitance (Coes)

PD (Maximum @ TC=100 °C)

PD (Maximum @ Tc=25 °C)

Package Code

Package Type

Packaging Type

Packing Type

Pb-Free

Pd Max (Maximum @ Tc=100 °C)

Power

Power - Max

Power Dissipation

Power Dissipation (@ TC = 25 °C)

Power Dissipation (@ Tc=100 °C)

Power Dissipation (Max)

Power Dissipation (Maximum @ TC=100 °C)

Power Dissipation (Maximum @ TC=25 °C)

Power Dissipation (Maximum)

Power Dissipation (Nominal @ TC=25 °C)

Power Dissipation (Nominal @ Tc=100 °C)

Power Dissipation (Unspecified condition)

Power Dissipation Derating

Power Dissipation Max (Maximum)

Pulse Collector Current

Pulsed Collector Current

Pulsed Collector Current (ICM)

Pulsed Collector Current (ILM/ICM)

Pulsed Collector Current (Maximum)

Pulsed Collector Current @ TC=25°C

Pulsed Diode Forward Current

Pulsed Diode Maximum Forward Current

Reflow Soldering Temperature

Reverse Recovery Time

Reverse Recovery Time (Typical)

Reverse Recovery Time (trr)

Reverse Transfer Capacitance

Reverse Transfer Capacitance (Cres)

Reverse Voltage Avalanche Energy

Rise Time

Rise Time (tr)

RthJC (Maximum)

RθJC (Maximum)

SCIS Energy

SVHC Present

Saturation Voltage (Maximum @ 15 V, 40 A)

Saturation Voltage (Maximum @ VGE = 15 V, IC = 35 A, TJ = 175 °C)

Saturation Voltage (Maximum @ VGE = 15 V, IC = 40 A, TJ = 175 °C)

Saturation Voltage (Maximum @ Vge = 15 V, Ic = 15 A, Tj = 175 °C)

Saturation Voltage (Typical @ VGE = 15 V, IC = 40 A)

Saturation Voltage (Typical @ Vge = 15 V, Ic = 15 A)

Short Circuit Withstand Time

Short circuit collector current

Soldering Temperature

Standard Package Qty

Standard Package Quantity

Storage Temperature

Storage Temperature (Tstg)

Storage Temperature Range

Storage Temperature Range (TSTG)

Supplier Device Package

Supplier Package

Switching Energy

Switching Energy (Eoff)

Switching Energy (Maximum @ on)

Switching Energy (Nominal @ off)

Switching Energy (On)

Switching Energy (Turn-Off)

Switching Energy (Typical @ off)

Switching Energy (Typical @ on)

Switching Energy (Typical)

Switching Energy (off)

Switching Energy (off) (Eoff)

Switching Energy - Turn-Off (Eoff)

Switching Safe Operating Area

Switching Safe Operating Area (SSOA)

Tape & Reel

Tape and Reel

Td (on

Td (on) / Tf (on)

Td (on/off)

Td (on/off) @ 25°C

Technology

Temperature Coeff. of Breakdown Voltage

Temperature Coefficient of Breakdown Voltage

Temperature Coefficient of Threshold Voltage

Termination Style

Test Condition

Thermal Resistance (Case to Sink)

Thermal Resistance (Junction-Ambient)

Thermal Resistance (Maximum)

Thermal Resistance (Typical)

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Case (Typical)

Thermal Resistance Junction Case (@ Diode)

Thermal Resistance Junction Case (@ IGBT)

Thermal Resistance Junction To Case (Maximum @ Diode)

Thermal Resistance Junction To Case (Maximum @ IGBT)

Thermal Resistance Junction To Case (Maximum)

Thermal Resistance Junction To Case (Nominal)

Thermal Resistance Junction To Case (Typical @ IGBT)

Thermal Resistance Junction To Case (Typical @ for Diode)

Thermal Resistance Junction To Case (Typical @ for IGBT)

Thermal Resistance Junction to Ambient (RθJA)

Thermal Resistance Junction-Case

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case (Diode)

Thermal Resistance Junction-to-Case (IGBT)

Thermal Resistance Junction-to-Case (RθJC)

Thermal Resistance Junction-to-Case (Typical @ Diode)

Thermal Resistance, Junction to Case (RthJC)

Total Gate Charge (Qg)

Total Switching Loss

Transconductance

Transient Gate-Emitter Voltage

Transient Gate-to-Emitter Voltage

Turn off Switching Loss

Turn-Off Delay Time

Turn-Off Delay Time (Tj=25°C)

Turn-Off Delay Time (Typical)

Turn-Off Delay Time (td(off))

Turn-Off Switching Energy

Turn-Off Switching Energy (Eoff)

Turn-Off Switching Energy (Typical)

Turn-Off Switching Loss (Eoff)

Turn-On Delay Time

Turn-On Delay Time (Typical)

Turn-On Delay Time (td(on))

Turn-On Switching Loss

Typical Fall Time

Vce(on) (Max) @ Vge, Ic

Vce(on) @ Vge, Ic

Vce(sat) (Typical)

Voltage

Voltage - Collector Emitter Breakdown

Voltage - Collector Emitter Breakdown (Max)

Voltage - Maximum

Voltage Gate Emitter (Maximum)

Voltage Saturation Collector Emitter (Typical @ VGE = 15 V, IC = 25 A)

Weight

Width

Zero Gate Voltage Collector Current (ICES)

current (@ TC = 25 °C)

current (Maximum @ 25 °C)

current (Maximum @ TC = 100 °C)

current (Maximum @ TC = 110 °C)

current (Maximum @ TC = 25 °C)

current (Maximum @ TC = 25 °C, 1 ms)

current (Maximum @ TPULSE Limited by TJ Max)

current (Maximum @ tp limited by Tjmax)

current (Nominal @ Tc = 100 °C)

current (Typical @ TC = 100 °C)

pd (Nominal @ TC=100 °C)

tD(Off)

temperature (Maximum)

vcesat (Maximum @ VGE = 15 V, IC = 40 A, TJ = 175 °C)

voltage (Unspecified condition)

STGW20NC60V

STMicroelectronics

1,200

Price on request

1,200

60 A

100 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

200 W

TO-247-3

220µJ (on), 330µJ (off)

31ns/100ns

390V, 20A, 3.3Ohm, 15V

2.5V @ 15V, 20A

600 V

FGPF4536

On Semiconductor

1,190

From Smaxon Electronics

Price on request

1,190

220 A

47 nC

Trench

Standard

Through Hole

28.4 W

TO-220F-3

1.8 V

360 V

FGB7N60UNDF

On Semiconductor

1,178

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	800	-	-
Smaxon Electronics	378	-	-

Price on request

1,178

Distributor	Stock	MOQ	Country
Flip Electronics	800	-	-
Smaxon Electronics	378	-	-

14 A

18 nC

NPT

Standard

Surface Mount

-55°C to 150°C (TJ)

83 W

32.3 ns

D²PAK (TO-263)

99 µJ

5.9 ns

400V, 7A, 10Ohm, 15V

32.3 ns

104 µJ

2.3 V @ 15V, 7A

600 V

IGW40N65F5FKSA1

Infineon Technologies

1,170

From Optech Co.,Limited

Price on request

1,170

1.6 V

74 A

95 nC

Standard

Through Hole

-40°C ~ 175°C (TJ)

255 W

PG-TO247-3

360 µJ

100 µJ

19ns/160ns

TRENCHSTOP 5

400V, 20A, 15Ohm, 15V

2.1 V

650 V

IKQ50N120CH3XKSA1

Infineon Technologies

1,170

From Optech Co.,Limited

Price on request

1,170

2 V

100 A

235 nC

Yes

Standard

Through Hole

175 °C

652 W

10 µs

-55.0°C ~ 150.0°C

PG-TO247-3-46

3 mJ

1.9 mJ

34 ns

600V, 50A, 10Ohm, 15V

297 ns

2.35 V

1200 V

FGH40T65UQDF-F155

On Semiconductor

1,153

Price on request

1,153

80 A

306 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

231 W

89 ns

30 (per tube)

TO-247-3

989 µJ

32 ns

Through Hole

400V, 40A, 6Ohm, 15V

40 °C/W

1.75 °C/W

0.65 °C/W

271 ns

310 µJ

1.67V @ Vge=15V, Ic=40A

650 V

IGP30N60H3

Infineon Technologies

1,127

Across 2 distributors

Distributor	Stock	MOQ	Country
Bristol Electronics	50	-	-
Xingangxin	1,077	-	-

Price on request

1,127

Distributor	Stock	MOQ	Country
Bristol Electronics	50	-	-
Xingangxin	1,077	-	-

60 A

165 nC

Trench Field Stop

Standard

Through Hole

-40°C to 175°C

187 W

PG-TO220-3-1

730 µJ (on), 440 µJ (off)

18 ns (on) / 207 ns (off)

400V, 30A, 10.5Ohm, 15V

2.4 V @ 15 V, 30 A

600 V

STGWT40H65FB

STMicroelectronics

1,125

From Smaxon Electronics

Price on request

1,125

80 A

210 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

283 W

TO-3P

498mJ (on), 363mJ (off)

40ns/142ns

400V, 40A, 5Ohm, 15V

2.3V @ 15V, 40A

650 V

IKW40N65WR5XKSA1

Infineon Technologies

1,110

From Optech Co.,Limited

Price on request

1,110

80 A

193 nC

Trench

Yes

Standard

Through Hole

-40°C ~ 175°C (TJ)

230 W

112 ns

Not Present

-55°C ~ 150°C

PG-TO247-3

770µJ (on), 160µJ (off)

42ns/432ns

Reverse-Conducting IGBT (monolithic body diode)

400V, 20A, 20Ohm, 15V

1.8V @ 15V, 40A

650 V

AFGHL30T65RQDN

On Semiconductor

1,103

Price on request

1,103

Yes

30 A

42 A

37 nC

±20 V

Field Stop

Standard

175 °C

Through Hole

-55°C ~ 175°C (TJ)

230.8 W

115.4 W

120 A

39 ns

Not Present

TO-247-3

340 µJ

320 µJ

18 ns

400V, 15A, 2.5Ohm, 15V

40 °C/W

±30 V

68 ns

1.82 V

650 V

FGB3040G2-F085

On Semiconductor

1,100

Price on request

1,100

Yes

41 A

21 nC

±10 V

Logic

Surface Mount

-55°C ~ 175°C

150 W

D²PAK (TO-263)

900ns/4.8µs

1.25 V @ 4V, 6A

400 V

HGTP20N60A4

On Semiconductor

1,087

Price on request

1,087

280 A

40 A

1.8V @ 20A

70 A

55ns

142 nC

±20 V

Standard

Through Hole

-55°C ~ 150°C (TJ)

290 W

2.32 W/°C

TO-220-3

105µJ (on)

100A at 600V

15ns

390V, 20A, 3Ohm, 15V

73ns

150µJ (off)

2.7V @ 15V, 20A

600 V

IGW30N60TPXKSA1

Infineon Technologies

1,080

From Optech Co.,Limited

Price on request

1,080

53 A

38 A

130 nC

Trench Field Stop

Yes

Standard

Through Hole

-40°C ~ 175°C (TJ)

200 W

-55°C ~ 150°C

PG-TO247-3

710 µJ

420 µJ

15 ns

400V, 30A, 10.5Ohm, 15V

179 ns

1.8 V

600 V

STGWT28IH125DF

STMicroelectronics

1,080

Price on request

1,080

60 A

114 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

375 W

TO-3P

720µJ (off)

-/128ns

600V, 25A, 10Ohm, 15V

2.5V @ 15V, 25A

1250 V

STGW8M120DF3

STMicroelectronics

1,050

Price on request

1,050

16 A

32 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

167 W

103 ns

TO-247-3

390µJ (on), 370µJ (Off)

20ns/126ns

600V, 8A, 33Ohm, 15V

2.3V @ 15V, 8A

1200 V

IHW30N60T

Infineon Technologies

1,040

From Smaxon Electronics

Price on request

1,040

60 A

167 nC

Trench Field Stop

Standard

Through Hole

-40°C ~ 175°C (TJ)

187 W

PG-TO247-3-21

770µJ (off)

23ns

400V, 30A, 10.6Ohm, 15V

254ns

2V @ 15V, 30A

600 V

IKA08N65H5

Infineon Technologies

1,000

From Smaxon Electronics

Price on request

1,000

1.65 V

10.8 A

22 nC

Yes

Trench Field Stop

Yes

Standard

175°C

Through Hole

-40°C ~ 175°C

31.2 W

40 ns

-55°C ~ 150°C

PG-TO220-3-111

70µJ (on), 30µJ (off)

11ns/115ns

TRENCHSTOP™ 5

400V, 4A, 48Ohm, 15V

2.1 V

650 V

STGW40V60DLF

STMicroelectronics

1,000

From PROSOFT ELECTRONICS

Price on request

1,000

80 A

226 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

283 W

TO-247-3

411µJ (off)

-/208ns

400V, 40A, 10Ohm, 15V

2.3V @ 15V, 40A

600 V

STGF8NC60KD

STMicroelectronics

1,000

From Hybrid Electronics

Price on request

1,000

7 A

19 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

24 W

23.5 ns

TO-220FP

55µJ (on), 85µJ (off)

17ns/72ns

390V, 3A, 10Ohm, 15V

2.75V @ 15V, 3A

600 V

STGB20N45LZAG

STMicroelectronics

1,000

Price on request

1,000

25 A

26 nC

Logic

Surface Mount

-55°C ~ 175°C (TJ)

150 W

D²PAK (TO-263)

1.1µs/4.6µs

300V, 10A, 1kOhm, 5V

1.25V @ 4V, 6A

450 V

STGP15M65DF2

STMicroelectronics

1,000

Price on request

1,000

30 A

45 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

136 W

142 ns

TO-220

90µJ (on), 450µJ (off)

24ns/93ns

400V, 15A, 12Ohm, 15V

2V @ 15V, 15A

650 V

STGH30H65DFB-2AG

STMicroelectronics

1,000

Price on request

1,000

60 A

155 nC

Trench Field Stop

Standard

Surface Mount

-55°C ~ 175°C (TJ)

260 W

28 ns

H2Pak-2

555µJ (on), 300µJ (off)

24ns/170ns

400V, 30A, 10Ohm, 15V

2V @ 15V, 30A

650 V

STGB30V60DF

STMicroelectronics

1,000

Price on request

1,000

60 A

163 nC

Trench Field Stop

Standard

Surface Mount

-55°C ~ 175°C (TJ)

258 W

53 ns

D2PAK

383µJ (on), 233µJ (off)

45ns/189ns

400V, 30A, 10Ohm, 15V

2.3V @ 15V, 30A

600 V

STGB40H65FB

STMicroelectronics

1,000

Price on request

1,000

80 A

210 nC

Trench Field Stop

Standard

Surface Mount

-55°C ~ 175°C (TJ)

283 W

D²PAK (TO-263)

498µJ (on), 363µJ (off)

40ns/142ns

400V, 40A, 5Ohm, 15V

2V @ 15V, 40A

650 V

STGB10NC60KT4

STMicroelectronics

1,000

From Hybrid Electronics

Price on request

1,000

20 A

19 nC

Standard

Surface Mount

-55°C ~ 150°C (TJ)

65 W

D2PAK

55µJ (on), 85µJ (off)

17ns/72ns

390V, 5A, 10Ohm, 15V

2.5V @ 15V, 5A

600 V

FGD3245G2-F085

On Semiconductor

1,000

From Braun Electronic Components

Price on request

1,000

Yes

27 A

450 V

23 A

23 nC

±10 V

Logic

Gull Wing

Surface Mount

-40°C ~ 175°C

-40°C ~ 175°C (TJ)

150 W

1.1 W/°C

-40°C ~ 175°C

TO-252AA

900ns/5.4µs

1.25V @ 4V, 6A

450 V

STGB20NB41LZT4

STMicroelectronics

1,000

Price on request

1,000

40 A

46 nC

Standard

Surface Mount

-55°C ~ 175°C (TJ)

200 W

D2PAK

5mJ (on), 12.9mJ (off)

1µs/12.1µs

320V, 20A, 1kOhm, 5V

2V @ 4.5V, 20A

442 V

STGB14NC60KT4

STMicroelectronics

1,000

From Hybrid Electronics

Price on request

1,000

25 A

34.4 nC

Standard

Surface Mount

-55°C ~ 150°C (TJ)

80 W

D2PAK

82µJ (on), 155µJ (off)

22.5ns/116ns

390V, 7A, 10Ohm, 15V

2.5V @ 15V, 7A

600 V

STGB20H65DFB2

STMicroelectronics

1,000

Price on request

1,000

40 A

56 nC

Trench Field Stop

Standard

Surface Mount

-55°C ~ 175°C (TJ)

147 W

215 ns

D2PAK-3

265µJ (on), 214µJ (off)

16ns/78.8ns

400V, 20A, 10Ohm, 15V

2.1V @ 15V, 20A

650 V

STGBL6NC60DT4

STMicroelectronics

1,000

From Hybrid Electronics

Price on request

1,000

14 A

12 nC

Standard

Surface Mount

-55°C ~ 150°C (TJ)

56 W

50 ns

D2PAK

46.5µJ (on), 23.5µJ (off)

6.7ns/46ns

390V, 3A, 10Ohm, 15V

2.9V @ 15V, 3A

600 V

STGW40H120F2

STMicroelectronics

1,000

Price on request

1,000

80 A

158 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

468 W

TO-247-3

1mJ (on), 1.32mJ (off)

18ns/152ns

600V, 40A, 10Ohm, 15V

2.6V @ 15V, 40A

1200 V

HGTG7N60A4D

On Semiconductor

994

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	900	-	-
Hybrid Electronics	94	-	-

Price on request

994

Distributor	Stock	MOQ	Country
Flip Electronics	900	-	-
Hybrid Electronics	94	-	-

34 A

75 ns

37 nC

±20 V

Standard

Through Hole

-55°C ~ 150°C (TJ)

125 W

56 A

34 ns

-55°C ~ 150°C

TO-247-3

55µJ (on), 60µJ (off)

11 ns

390V, 7A, 25Ohm, 15V

100 ns

2.7 V

600 V

NGTB50N65FL2WG

On Semiconductor

964

Price on request

964

650 V

100 A

50 A

100 A

50 A

100 A

200 A

220 nC

5.5 V

±20 V

Trench Field Stop

Standard

260°C

Through Hole

-55°C ~ 175°C

417 W

208 W

417 W

200 A

94 ns

5 µs

-55°C ~ 175°C

TO-247-3

1.5 mJ (on), 460 µJ (off)

100ns/237ns

400V, 50A, 10Ohm, 15V

40 °C/W

0.60 °C/W

0.36 °C/W

±30 V

2 V

650 V

FGPF70N30

On Semiconductor

951

Price on request

951

100 µA

300 V

1.4 V

160 A

71 nC

34 nC

10 nC

±250 nA

2.5V min, 4.0V typ, 5V max

1300 pF

Standard

Through Hole

-55°C ~ 150°C

180 pF

52 W

60 pF

-55°C ~ 150°C

TO-220F-3

0.6 V/°C

62.5 °C/W

2.4 °C/W

1.2V typ / 1.5V max

300 V

HGTP7N60A4

On Semiconductor

950

Price on request

950

34 A

37 nC

Standard

Through Hole

Yes

Through Hole

-55°C ~ 150°C (TJ)

125 W

TO-220-3

55µJ (on)

11ns

390V, 7A, 25Ohm, 15V

100ns

60µJ (off)

2.7V @ 15V, 7A

600 V

IXGR48N60C3D1

IXYS

943

Price on request

943

56 A

77 nC

+/- 20 V

21.34 mm

Standard

16.13 mm

Through Hole

-55°C ~ 150°C

125 W

25 ns

ISOPLUS247™

ISOPLUS247

410µJ (on)

19ns/60ns

400V, 30A, 3Ohm, 15V

2.7V @ 15V, 30A

600 V

5.21 mm

FGPF90N30

On Semiconductor

935

Price on request

935

220 A

93 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

56.8 W

TO-220F-3

1.55V @ 15V, 30A

300 V

SGF40N60UFTU

On Semiconductor

921

Price on request

921

40 A

97 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

100 W

TO-3PF

160µJ (on), 200µJ (off)

15ns/65ns

300V, 20A, 10Ohm, 15V

2.6V @ 15V, 20A

600 V

FGH75T65SHDTL4

On Semiconductor

917

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	559	-	-
Smaxon Electronics	358	-	-

Price on request

917

Distributor	Stock	MOQ	Country
Flip Electronics	559	-	-
Smaxon Electronics	358	-	-

75 A

150 A

75 A

125 A

126 nC

±20 V

Field Stop

Standard

175 °C

Through Hole

-55°C to 175°C

455 W

227 W

300 A

76 ns

30 pcs

-55°C ~ 175°C

TO-247-4

1.06 mJ

55 ns

400V, 75A, 15Ohm, 15V

40 °C/W

0.65 °C/W

0.33 °C/W

±30 V

189 ns

1.56 mJ

1.6V / 2.1V

650 V

FGH40T120SMDL4

On Semiconductor

900

Price on request

900

160 A

40 A

250 µA

1200 V

1.8 V

1200 V

80 A

40 A

80 A

240 A

370 nC

±400 nA

±25 V

Trench Field Stop

Yes

Standard

300 °C

Through Hole

-55°C ~ 175°C

555 W

277 W

160 A

65 ns

-55°C ~ 175°C

TO-247

2.24 mJ

44 ns

600V, 40A, 10Ohm, 15V

0.27 °C/W

40 °C/W

464 ns

2.4 V

1200 V

FGY75N60SMD

On Semiconductor

900

Price on request

900

150 A

248 nC

Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

750 W

55 ns

PowerTO-247-3

2.3 mJ

770 µJ

24 ns

400V, 75A, 3Ohm, 15V

136 ns

2.5 V @ 15V, 75A

600 V

FGA30T65SHD

On Semiconductor

900

Price on request

900

60 A

54.7 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

238 W

31.8 ns

TO-3PN

598 µJ

167 µJ

14.4 ns

400V, 30A, 6Ohm, 15V

52.8 ns

2.1 V

650 V

FGH75T65UPD-F155

On Semiconductor

900

Price on request

900

1.65 V / 2.3 V

150 A

68 nC

±20 V

Trench Field Stop

5665 pF

Standard

Through Hole

-55°C ~ 175°C (TJ)

375 W

187 W

225 A

85 ns

5 µs

30 ea

-55°C ~ 175°C

-55°C to 175°C

TO-247

3.68 mJ

1.6 mJ

42 ns / 216 ns

400V, 75A, 3Ohm, 15V

40 °C/W

0.86 °C/W

0.40 °C/W

2.3V @ 15V, 75A

650 V

STGP8NC60K

STMicroelectronics

900

Price on request

900

15 A

19 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

65 W

TO-220

55µJ (on), 85µJ (off)

17ns/72ns

390V, 3A, 10Ohm, 15V

2.75V @ 15V, 3A

600 V

FGH75T65SQDNL4

On Semiconductor

900

Price on request

900

650 V

200 A

152 nC

75 A

150 A

75 A

150 A

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C

-55°C ~ 175°C (TJ)

188 W

375 W

300 A

134 ns

-55°C ~ 175°C

TO-247-4L

1.25 mJ

44 ns

400V, 75A, 10Ohm, 15V

40 °C/W

208 ns

1.26 mJ

2.1V @ 15V, 75A

650 V

FGH4L40T120LQD

On Semiconductor

900

Price on request

900

1200 V

40 A

40 µA

80 A

40 A

80 A

227 nC

200 nA

±20 V

Trench Field Stop

Yes

Standard

175 °C

Through Hole

-55°C ~ 175°C (TJ)

306 W

153 W

160 A

59 ns

Present

30 Units / Rail

-55°C ~ 175°C

TO-247-4L

1.04 mJ

1.35 mJ

42 ns

600V, 40A, 10Ohm, 15V

40 °C/W

1.8V @ 15V, 40A

1200 V

FGA3060ADF

On Semiconductor

900

Price on request

900

60 A

37.4 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

176 W

26 ns

TO-3PN

960µJ (on), 165µJ (off)

12ns/42.4ns

400V, 30A, 6Ohm, 15V

2.3V @ 15V, 30A

600 V

STGFL6NC60D

STMicroelectronics

900

Price on request

900

7 A

12 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

22 W

30 ns

TO-220FP

46.5µJ (on), 23.5µJ (off)

6.7ns/46ns

390V, 3A, 10Ohm, 15V

2.9V @ 15V, 3A

600 V

STGP30NC60W

STMicroelectronics

877

Price on request

877

60 A

102 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

200 W

TO-220

305µJ (on), 181µJ (off)

29.5ns/118ns

390V, 20A, 10Ohm, 15V

2.5V @ 15V, 20A

600 V

FGA30N60LSDTU

On Semiconductor

868

Price on request

868

60 A

225 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 150°C (TJ)

480 W

35 ns

TO-3P

1.1 mJ

18 ns

400V, 30A, 6.8Ohm, 15V

1.4 V

600 V

Showing 401-450 of 3,427 products

About Transistors - IGBTs - Single

Transistors - IGBTs - Single are essential components in the realm of discrete semiconductor products, specifically engineered for high-efficiency switching applications. These transistors are pivotal in managing power and controlling current in various electronic systems.

When sourcing IGBTs, it is crucial to consider key attributes such as Current, Gate Charge, IGBT Type, Input Type, and Operating Temperature. These specifications directly influence the performance and suitability of the transistors for your specific applications.

Applications for Transistors - IGBTs - Single include new product design and prototyping, production electronics assembly, maintenance and field replacement, and engineering evaluation and qualification. Each application may require different specifications, making it essential to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

Buyers are encouraged to prioritize parametric filtering based on critical specifications rather than brand preference to mitigate sourcing risks. Understanding the mechanical and electrical compatibility with existing design constraints is also vital for successful integration.

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Transistors - IGBTs - Single

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