| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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964 pcs
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964 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
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| Switching Energy | |
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| Vce(on) (Max) @ Vge, Ic | |
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The NGTB50N65FL2WG is an Insulated Gate Bipolar Transistor (IGBT) from On Semiconductor, featuring a robust Trench Field Stop II construction. This design offers superior performance in demanding switching applications by providing both low on-state voltage and minimal switching loss.
Key electrical specifications include a collector-emitter voltage of 650V and a continuous collector current of 100A at 25°C. The device supports a maximum power dissipation of 417W at 25°C and operates within a junction temperature range of -55°C to 175°C. It also features a soft and fast co-packaged free-wheeling diode with a low forward voltage.
This IGBT is optimized for high-speed switching applications and is well-suited for use in Uninterruptible Power Supplies (UPS) and solar inverters. The device is packaged in a TO-247-3 through-hole configuration, facilitating easy integration into various electronic designs.
With a short-circuit withstand time of 5 µs, the NGTB50N65FL2WG is designed for reliability in demanding environments. Its construction emphasizes efficiency and performance, making it a suitable choice for power electronics systems requiring robust switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 650V.
The maximum continuous collector current is 100A at 25°C.
The operating junction temperature range is -55°C to 175°C.
This IGBT is in a TO-247-3 package.
This component is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.