STGW8M120DF3 The STMicroelectronics STGW8M120DF3 is a Trench Field Stop IGBT designed for high-power applications. It features a 1200V voltage rating and 16A current capability.
Mfr Part #:

STGW8M120DF3

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGW8M120DF3 is a Trench Field Stop IGBT designed for high-power applications. It features a 1200V voltage rating and 16A current capability.
Total Stock: 1,050 pcs
$ Price Range: $4.16

STGW8M120DF3 Available from 1 distributor

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STGW8M120DF3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Switching Energy (Typical @ off)
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

STGW8M120DF3 Description

Short technical summary and product information.

The STMicroelectronics STGW8M120DF3 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers a high breakdown voltage of 1200V and a continuous collector current rating of 16A, with a power dissipation of 167W.

 

This IGBT features a standard input type and a Through Hole mounting package (TO-247-3), making it suitable for robust circuit designs. Key electrical characteristics include a Vce(on) of 2.3V at 15V and 8A, a gate charge of 32 nC, and switching energies of 390µJ (on) and 370µJ (off). The operating temperature range is from -55°C to 175°C (TJ).

 

With a reverse recovery time of 103 ns and Td(on) values of 20ns/126ns, the STGW8M120DF3 is engineered for efficient switching performance. It is specified under test conditions of 600V, 8A, 33Ohm, and 15V.

STGW8M120DF3 Quick Information

Product Type: IGBT Transistor
Series: M
Canonical Name: STMicroelectronics STGW8M120DF3 Trench Field Stop IGBT
Subcategory: Single

STGW8M120DF3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGW8M120DF3 Estimated Pricing

Qty Low High
1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGW8M120DF3 Features

  • 1200V voltage rating for high power.
  • 16A continuous current capability.
  • 167W power dissipation.
  • Through Hole mounting package.
  • Wide -55°C to 175°C operating temperature.

STGW8M120DF3 Applications

  • Ideal for power switching circuits.
  • Suitable for industrial applications.
  • Used in high voltage systems.
  • Designed for efficient power conversion.

STGW8M120DF3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the STGW8M120DF3?

The maximum collector-emitter voltage is 1200V.

What is the continuous collector current rating?

The continuous collector current rating is 16A.

What is the typical on-state voltage?

The typical on-state voltage (Vce(on)) is 2.3V at a gate-emitter voltage of 15V and collector current of 8A.

What package does the STGW8M120DF3 come in?

It comes in a TO-247-3 through-hole package.

What is the operating junction temperature range?

The junction temperature range is -55°C to 175°C.

What is the total gate charge?

The total gate charge is 32 nC.

What is the reverse recovery time of the integrated diode?

The reverse recovery time is 103 ns.

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