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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,050 pcs
|
1050 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Typical @ off) | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The STMicroelectronics STGW8M120DF3 is a single Trench Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. It offers a high breakdown voltage of 1200V and a continuous collector current rating of 16A, with a power dissipation of 167W.
This IGBT features a standard input type and a Through Hole mounting package (TO-247-3), making it suitable for robust circuit designs. Key electrical characteristics include a Vce(on) of 2.3V at 15V and 8A, a gate charge of 32 nC, and switching energies of 390µJ (on) and 370µJ (off). The operating temperature range is from -55°C to 175°C (TJ).
With a reverse recovery time of 103 ns and Td(on) values of 20ns/126ns, the STGW8M120DF3 is engineered for efficient switching performance. It is specified under test conditions of 600V, 8A, 33Ohm, and 15V.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200V.
The continuous collector current rating is 16A.
The typical on-state voltage (Vce(on)) is 2.3V at a gate-emitter voltage of 15V and collector current of 8A.
It comes in a TO-247-3 through-hole package.
The junction temperature range is -55°C to 175°C.
The total gate charge is 32 nC.
The reverse recovery time is 103 ns.