FGH40T65UQDF-F155 The FGH40T65UQDF-F155 is a 650V, 80A Trench Field Stop IGBT from ON Semiconductor. It features low saturation voltage and fast switching, housed in a TO-247-3 through-hole package.
Mfr Part #:

FGH40T65UQDF-F155

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGH40T65UQDF-F155 is a 650V, 80A Trench Field Stop IGBT from ON Semiconductor. It features low saturation voltage and fast switching, housed in a TO-247-3 through-hole package.
Total Stock: 1,153 pcs
$ Price Range: $2.05

FGH40T65UQDF-F155 Available from 1 distributor

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FGH40T65UQDF-F155 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Package Style
Power
Reverse Recovery Time (trr)
Standard Package Qty
Supplier Device Package
Switching Energy
Td (on
Termination Style
Test Condition
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance Junction-to-Case (IGBT)
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

FGH40T65UQDF-F155 Description

Short technical summary and product information.

The FGH40T65UQDF-F155 is a 650V, 80A Trench Field Stop IGBT manufactured by ON Semiconductor. This device utilizes field stop technology to provide superior conduction and switching performance, making it suitable for resonant or soft switching applications such as induction heating and microwave ovens (MWO).

 

Key electrical specifications include a maximum collector-emitter voltage of 650V, a continuous collector current of 80A at case temperature 25°C, and a maximum power dissipation of 231W. The typical gate charge is 306 nC, and switching energies are 989 µJ (turn-on) and 310 µJ (turn-off) under test conditions of 400V, 40A, 6 Ohm gate resistance, and 15V gate drive. The collector-emitter saturation voltage is typically 1.67V at Vge=15V, Ic=40A.

 

The device is housed in a TO-247-3 package with through-hole mounting, suitable for high-power applications. It has an operating junction temperature range of -55°C to 175°C. The IGBT is Pb-Free and RoHS compliant, and it features positive temperature coefficient for easy parallel operation.

FGH40T65UQDF-F155 Quick Information

Product Type: IGBT
Series: 4th Generation Field Stop
Canonical Name: FGH40T65UQDF-F155 IGBT
Subcategory: Single IGBT

FGH40T65UQDF-F155 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGH40T65UQDF-F155 Estimated Pricing

Qty Low High
300+ $2.05 $2.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH40T65UQDF-F155 Features

  • 650V collector-emitter voltage rating.
  • 80A continuous collector current capability.
  • Trench Field Stop IGBT technology.
  • Low saturation voltage of 1.67V.
  • RoHS compliant and Pb-Free.

FGH40T65UQDF-F155 Applications

  • Induction heating power supplies.
  • Microwave oven (MWO) resonant converters.
  • Soft switching power converters.
  • High-power inverter circuits.

FGH40T65UQDF-F155 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

650 V.

What is the package type?

TO-247-3 (through-hole).

What is the operating junction temperature range?

-55°C to 175°C.

Is the device RoHS compliant?

Yes, it is RoHS3 compliant and Pb-Free.

What is the maximum collector current?

80 A at TC=25°C.

What is the gate charge?

306 nC typical.

What are the switching energies?

Turn-on 989 µJ, turn-off 310 µJ at 400V, 40A.

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