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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
921 pcs
|
921 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Charge Gate Total (Typical @ VCE = 300 V, IC = 20 A, VGE = 15 V) | |
| Current | |
| Current Collector (Nominal @ TC = 100 °C) | |
| Current Collector (Nominal @ TC = 25 °C) | |
| Current Collector Pulsed (Maximum) | |
| Energy Switching (Nominal @ off) | |
| Energy Switching Total | |
| Energy Switching Turn Off | |
| Energy Switching Turn On | |
| Gate Charge | |
| Gate-Emitter Voltage | |
| Input Capacitance | |
| Input Type | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation Max (Nominal @ TC = 100 °C) | |
| Power Dissipation Max (Nominal @ TC = 25 °C) | |
| Reverse Transfer Capacitance | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Time Delay Turn Off | |
| Time Delay Turn On | |
| Time Fall (Typical @ VCC = 300 V, IC = 20 A, RG = 10Ω , VGE = 15 V, Inductive Load, TC = 125 °C) | |
| Time Fall (Typical @ VCC = 300 V, IC = 20 A, RG = 10Ω , VGE = 15 V, Inductive Load, TC = 25 °C) | |
| Time Rise (Typical @ VCC = 300 V, IC = 20 A, RG = 10Ω , VGE = 15 V, Inductive Load, TC = 125 °C) | |
| Time Rise (Typical @ VCC = 300 V, IC = 20 A, RG = 10Ω , VGE = 15 V, Inductive Load, TC = 25 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Voltage Collector Emitter Breakdown (Minimum @ VGE = 0 V, IC = 250 µA) | |
| Voltage Saturation Collector Emitter (Typical/Maximum @ IC = 20 A, VGE = 15 V) |
The On Semiconductor SGF40N60UFTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching, such as motor controls and general inverters. It offers low conduction and switching losses.
Key electrical specifications include a collector-emitter breakdown voltage of 600V and a continuous collector current of 40A at 25°C. The device features a low saturation voltage (VCE(sat)) of 2.1V at IC = 20A and a maximum power dissipation of 100W at 25°C.
This IGBT operates within a junction temperature range of -55°C to +150°C and is housed in a TO-3PF package, suitable for through-hole mounting. Its thermal resistance from junction to case is 1.2°C/W.
The SGF40N60UFTU exhibits fast switching characteristics with typical turn-on delay times of 15ns and turn-off delay times of 65ns at 25°C. Switching losses are rated at 160µJ (on) and 200µJ (off) under specified test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 600V.
The continuous collector current is 40A at 25°C and 20A at 100°C.
The maximum power dissipation is 100W at 25°C.
The operating junction temperature range is -55°C to +150°C.
The package type is TO-3PF.
The typical turn-on delay time is 15ns at 25°C.
The typical turn-off delay time is 65ns at 25°C.