| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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921 pcs
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921 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
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The On Semiconductor SGF40N60UFTU is an Ultra-Fast Insulated Gate Bipolar Transistor (IGBT) designed for applications requiring high-speed switching, such as motor controls and general inverters. It offers low conduction and switching losses.
Key electrical specifications include a collector-emitter breakdown voltage of 600V and a continuous collector current of 40A at 25°C. The device features a low saturation voltage (VCE(sat)) of 2.1V at IC = 20A and a maximum power dissipation of 100W at 25°C.
This IGBT operates within a junction temperature range of -55°C to +150°C and is housed in a TO-3PF package, suitable for through-hole mounting. Its thermal resistance from junction to case is 1.2°C/W.
The SGF40N60UFTU exhibits fast switching characteristics with typical turn-on delay times of 15ns and turn-off delay times of 65ns at 25°C. Switching losses are rated at 160µJ (on) and 200µJ (off) under specified test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 600V.
The continuous collector current is 40A at 25°C and 20A at 100°C.
The maximum power dissipation is 100W at 25°C.
The operating junction temperature range is -55°C to +150°C.
The package type is TO-3PF.
The typical turn-on delay time is 15ns at 25°C.
The typical turn-off delay time is 65ns at 25°C.