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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector, pulsed | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power - Max | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Td (on/off) | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage | |
| Voltage - Collector Emitter Breakdown |
The STMicroelectronics STGB20NB41LZT4 is a single Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. It features a collector-emitter breakdown voltage of 442V and can handle a continuous collector current of 40A, with a maximum power dissipation of 200W.
This IGBT is suitable for various power electronics designs requiring high voltage and current capabilities. It operates with a standard input type and has a gate charge of 46 nC. The Vce(on) is rated at a maximum of 2V when operating at 4.5V gate-emitter voltage and 20A collector current.
The component is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mount applications. It has a specified operating temperature range of -55°C to 175°C (TJ). Switching energy is rated at 5mJ for turn-on and 12.9mJ for turn-off, with a Td (on/off) of 1µs/12.1µs.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 442V.
The continuous collector current is 40A.
The maximum power dissipation is 200W.
It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
The mounting type is Surface Mount.
The operating temperature range is -55°C to 175°C (TJ).
The gate charge is 46 nC.