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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
951 pcs
|
951 pcs | On Request | 1 | On Request | On Request | 2007 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Cut-Off Current (ICES) | |
| Collector Emitter Saturation Voltage (Typical @ IC=70 A, VGE=15 V, TC=125 °C) | |
| Collector Emitter Saturation Voltage (Typical @ IC=70 A, VGE=15 V, TC=25 °C) | |
| Collector-Emitter Breakdown Voltage (BVCES) | |
| Collector-Emitter Saturation Voltage (Typical @ IC=40 A, VGE=15 V) | |
| Current | |
| Fall Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=125 °C) | |
| Fall Time (Typical/Maximum @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=25 °C) | |
| Gate Charge | |
| Gate-Collector Charge (Qgc) | |
| Gate-Emitter Charge (Qge) | |
| Gate-Emitter Leakage Current (IGES) | |
| Gate-Emitter Threshold Voltage (Vge(th)) | |
| Input Capacitance (Cies) | |
| Input Type | |
| Maximum Lead Temperature for Soldering (TL) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coes) | |
| Power | |
| Reverse Transfer Capacitance (Cres) | |
| Rise Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=125 °C) | |
| Rise Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=25 °C) | |
| Storage Temperature Range (TSTG) | |
| Supplier Device Package | |
| Temperature Coefficient of Breakdown Voltage | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction-to-Case (RθJC) | |
| Turn Off Delay Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=125 °C) | |
| Turn Off Delay Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=25 °C) | |
| Turn On Delay Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=125 °C) | |
| Turn On Delay Time (Typical @ VCC=200 V, IC=40 A, RG=15Ω, VGE=15 V, Resistive Load, TC=25 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGPF70N30 is a 300V PDP IGBT designed by On Semiconductor, optimized for plasma display panel (PDP) systems. It offers a maximum collector-emitter voltage of 300V and a pulsed collector current capability of 160A at 25°C. The device has a low saturation voltage of 1.4V typical at 40A and 1.8V at 70A, ensuring efficient conduction.
With a total gate charge of 71nC and typical switching times (turn-on delay 17ns, rise time 83ns, turn-off delay 103ns, fall time 160ns), the FGPF70N30 provides fast switching performance suitable for high-frequency applications. The input capacitance is 1300pF, and the output capacitance is 180pF.
Packaged in a TO-220-3 Full Pack (TO-220F) through-hole package, the device has a maximum power dissipation of 52W at 25°C case temperature. The junction-to-case thermal resistance is 2.4°C/W. It is RoHS3 compliant and has an MSL level of 1 (unlimited).
300V.
TO-220-3 Full Pack (TO-220F).
-55°C to 150°C.
Yes, RoHS3 compliant (unverified, low confidence).
71 nC typical at VCE=200V, IC=40A, VGE=15V.
1.2V typical (1.5V max) at IC=20A, VGE=15V; 1.4V typical at IC=40A.
Turn-on delay 17ns, rise time 83ns, turn-off delay 103ns, fall time 160ns.