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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,077 pcs
|
1077 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The IGP30N60H3 is a discrete IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, utilizing Trench Field Stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A, with a maximum power dissipation of 187W. The device operates over a junction temperature range of -40°C to 175°C. Key electrical characteristics include a collector-emitter saturation voltage of 2.4V at 15V gate voltage and 30A collector current, and a gate charge of 165 nC. Switching energies are 730 µJ (turn-on) and 440 µJ (turn-off) under test conditions of 400V, 30A, 10.5Ω gate resistor, and 15V gate drive. The IGBT is housed in a standard TO-220-3 through-hole package (PG-TO220-3-1), suitable for various power conversion and motor control applications. Its Trench Field Stop design offers low conduction and switching losses, making it appropriate for high-frequency switching circuits. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
600V.
60A.
-40°C to 175°C.
TO-220-3 (PG-TO220-3-1).
Yes, RoHS3 compliant (unverified).
165 nC.
730 µJ (on) and 440 µJ (off) at 400V, 30A, 10.5Ω, 15V.