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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,087 pcs
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1087 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Pulsed) | |
| Collector Current - Continuous | |
| Collector Emitter Saturation Voltage (Typical) | |
| Current | |
| Fall Time | |
| Gate Charge | |
| Gate-Emitter Voltage (Continuous) | |
| Gate-Emitter Voltage (Pulsed) | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation Derating | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Safe Operating Area | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTP20N60A4 is a 600V, 70A N-channel IGBT designed for high-frequency switching applications. It combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor.
Key electrical characteristics include a maximum collector-emitter saturation voltage of 2.7V at 15V gate voltage and 20A collector current, with typical saturation voltage of 1.8V at 20A. The device features 142nC total gate charge and switching energies of 105µJ (on) and 150µJ (off) under test conditions of 390V, 20A, 3Ω, and 15V gate drive. Turn-on delay is 15ns and turn-off delay is 73ns.
Packaged in a through-hole TO-220-3 (JEDEC TO-220AB) case, the HGTP20N60A4 can dissipate up to 290W at 25°C case temperature, with derating of 2.32W/°C above 25°C. The operating junction temperature range is -55°C to 150°C.
This IGBT is suited for SMPS, UPS, welders, and induction heating applications. The device is RoHS compliant and has an MSL rating of 1 (unlimited).
600V
70A at 25°C case temperature
TO-220-3 (through-hole)
-55°C to 150°C
1.8V at 20A collector current
Yes, reported as RoHS3 compliant.