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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,080 pcs
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1080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
This STMicroelectronics STGWT28IH125DF is a single Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features a robust 1250V voltage rating and a significant 60A current capability, with a power dissipation of 375W.
The IGBT operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-3P-3, SC-65-3 package, suitable for through-hole mounting. Key electrical characteristics include a maximum saturation voltage of 2.5V at 15V and 25A, and a switching energy of 720µJ (off). The device has a standard input type and a gate charge of 114 nC.
This component is suitable for various power switching applications where high voltage and current handling are required. Its Trench Field Stop IGBT technology contributes to efficient performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.16 | $4.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage for the STGWT28IH125DF is 1250 V.
The STGWT28IH125DF has a current rating of 60 A.
The power dissipation for the STGWT28IH125DF is 375 W.
The operating temperature range for the STGWT28IH125DF is -55°C to 175°C (TJ).
The STGWT28IH125DF is supplied in a TO-3P-3, SC-65-3 package.
The STGWT28IH125DF is mounted using the through-hole method.