FGB7N60UNDF The FGB7N60UNDF is a 600V, 14A NPT IGBT from On Semiconductor, designed for surface mount assembly in a D²PAK (TO-263) package.
Mfr Part #:

FGB7N60UNDF

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGB7N60UNDF is a 600V, 14A NPT IGBT from On Semiconductor, designed for surface mount assembly in a D²PAK (TO-263) package.
Total Stock: 1,178 pcs
$ Price Range: $1.56

FGB7N60UNDF Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
800 pcs
800 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
378 pcs
378 pcs On Request 1 On Request On Request 11+ On Request On Request

FGB7N60UNDF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Supplier Device Package
Switching Energy
Td (on
Test Condition
Turn-Off Delay Time (td(off))
Turn-Off Switching Energy (Eoff)
Vce(on) (Max) @ Vge, Ic
Voltage

FGB7N60UNDF Description

Short technical summary and product information.

The FGB7N60UNDF is an NPT (Non-Punch Through) IGBT from On Semiconductor, rated for a collector-emitter voltage of 600V and a continuous collector current of 14A. It offers a maximum power dissipation of 83W and a typical gate charge of 18nC, enabling efficient switching performance.

 

The device features a low saturation voltage of 2.3V (max) at 15V gate drive and 7A collector current, with typical turn-on and turn-off switching energies of 99µJ and 104µJ respectively. Switching speeds are characterized by a 5.9ns turn-on delay and 32.3ns turn-off delay.

 

This IGBT is housed in a surface mount TO-263-3 (D²Pak) package, also known as D²PAK (TO-263), suitable for automated assembly processes. The operating junction temperature range is -55°C to 150°C, making it fit for a wide range of industrial and power conversion applications.

FGB7N60UNDF Quick Information

Product Type: Insulated Gate Bipolar Transistor
Canonical Name: FGB7N60UNDF NPT IGBT, 600V, 14A, Surface Mount D²PAK (TO-263)
Subcategory: Single IGBT

FGB7N60UNDF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FGB7N60UNDF Estimated Pricing

Qty Low High
192+ $1.56 $1.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGB7N60UNDF Features

  • Rated for 600V collector-emitter voltage.
  • Handles 14A continuous collector current.
  • 83W power dissipation capability.
  • Surface mount D²PAK (TO-263) package.
  • Non-punch through (NPT) IGBT technology.

FGB7N60UNDF Applications

  • Used in power inverter circuits.
  • Ideal for motor drive power stages.
  • Suitable for switch-mode power supplies.
  • Applicable in uninterruptible power supplies.

FGB7N60UNDF FAQs

2 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the FGB7N60UNDF?

The FGB7N60UNDF has a collector-emitter voltage (Vce) rating of 600V.

What is the maximum collector current for this IGBT?

The continuous collector current (Ic) rating is 14A.

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