STGB30V60DF The STMicroelectronics STGB30V60DF is a Trench Field Stop IGBT transistor with a 600V collector-emitter breakdown voltage and 60A continuous current rating. It is housed in a surface-mount D2PAK package.
Mfr Part #:

STGB30V60DF

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STGB30V60DF is a Trench Field Stop IGBT transistor with a 600V collector-emitter breakdown voltage and 60A continuous current rating. It is housed in a surface-mount D2PAK package.
Total Stock: 1,000 pcs
$ Price Range: $4.16

STGB30V60DF Available from 1 distributor

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STGB30V60DF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Switching Energy
Switching Energy (off)
Td (on
Test Condition
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

STGB30V60DF Description

Short technical summary and product information.

The STMicroelectronics STGB30V60DF is a single Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. It features a collector-emitter breakdown voltage of 600V and a continuous collector current capability of 60A, with a maximum power dissipation of 258W.

 

This IGBT utilizes Trench Field Stop technology, offering a standard input type and a typical gate charge of 163 nC. Electrical characteristics include a collector-emitter saturation voltage of 2.3V at 15V and 30A, and switching energies of 383 µJ (on) and 233 µJ (off). The operating temperature range is -55°C to 175°C (junction).

 

Packaged in a surface-mount D2PAK (TO-263-3) package, the STGB30V60DF is suitable for applications requiring compact and efficient power solutions. Its robust design and specifications make it appropriate for various industrial and consumer electronics power supplies, motor drives, and inverter circuits.

STGB30V60DF Quick Information

Product Type: IGBT Transistor
Canonical Name: STMicroelectronics STGB30V60DF Trench Field Stop IGBT
Subcategory: Single IGBT

STGB30V60DF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STGB30V60DF Estimated Pricing

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1+ $4.16 $4.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

STGB30V60DF Features

  • 600V collector-emitter breakdown voltage.
  • 60A continuous collector current.
  • 258W maximum power dissipation.
  • Surface mount D2PAK package.
  • Wide -55°C to 175°C operating temperature.

STGB30V60DF Applications

  • Power supply circuits.
  • Motor drive applications.
  • Inverter circuits.
  • High-efficiency switching applications.

STGB30V60DF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the STGB30V60DF?

The maximum collector-emitter breakdown voltage is 600V.

What is the continuous collector current rating?

The maximum continuous collector current is 60A.

What is the maximum power dissipation?

The maximum power dissipation is 258W.

What is the collector-emitter saturation voltage?

The maximum saturation voltage is 2.3V at 15V gate voltage and 30A collector current.

What is the gate charge?

The typical gate charge is 163 nC.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the STGB30V60DF available in?

It is available in a TO-263-3 (D²Pak) surface mount package.

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