| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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943 pcs
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943 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IXYS IXGR48N60C3D1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) suitable for various power switching applications. It features a robust 600V collector-emitter voltage rating and a continuous collector current capacity of 56A, with a maximum power dissipation of 125W.
This IGBT transistor is built on silicon technology and utilizes a standard input type. Key electrical characteristics include a gate-emitter voltage range of +/- 20V, a maximum on-state voltage of 2.7V at 15V gate-emitter voltage and 30A collector current, and switching energy values of 410µJ (turn-on) and 230µJ (turn-off). The device also has a gate charge of 77 nC and a reverse recovery time of 25 ns.
Packaged in a TO-247-3 configuration, the IXGR48N60C3D1 is designed for through-hole mounting. It operates within a wide temperature range of -55°C to 150°C. The dimensions are 21.34mm in height, 16.13mm in length, and 5.21mm in width. The standard packaging is a tube, with a factory pack quantity of 30 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 600V.
The continuous collector current rating is 56A.
The maximum power dissipation is 125W.
The operating temperature range is -55°C to 150°C.
It is in a TO-247-3 package.