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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Collector Current - Continuous | |
| Collector-to-Emitter Breakdown Voltage | |
| Current | |
| Electrostatic Discharge Voltage (CDM) | |
| Electrostatic Discharge Voltage (HBM) | |
| Emitter to Collector Voltage | |
| Gate Charge | |
| Gate-to-Emitter Voltage | |
| Input Type | |
| Lead Style | |
| Max Lead Temp for Soldering | |
| Max Lead Temp for Soldering (Package Body) | |
| Mounting Type | |
| Operating Junction Temperature | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Total) | |
| Power Dissipation Derating | |
| Self Clamping Inductive Switching Energy | |
| Storage Junction Temperature | |
| Storage Temperature | |
| Supplier Device Package | |
| Td (on | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGD3245G2-F085 is an N-Channel Ignition IGBT designed by On Semiconductor using ECOSPARK 2 technology. It is optimized for automotive ignition coil driver circuits and coil-on-plug applications. The device provides a logic-level gate drive with integrated ESD protection and gate resistor.
Key electrical specifications include a collector-emitter breakdown voltage of 450V (minimum), continuous collector current of 41A at 25°C and 27A at 110°C, and a self-clamping inductive switching energy of 320mJ at 25°C and 180mJ at 150°C. The gate-emitter voltage is rated at ±10V maximum. The device also features a low saturation voltage of 1.25V at VGE=4V, IC=6A.
The FGD3245G2-F085 is offered in a surface-mount TO-252-3 (DPak) package with a TO-252AA supplier device package. It operates over a junction temperature range of -40°C to 175°C and has a maximum power dissipation of 150W. The device is AEC-Q101 qualified and PPAP capable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.56 | $3.56 |
| 10+ | $2.32 | $2.32 |
| 100+ | $1.61 | $1.61 |
| 500+ | $1.31 | $1.31 |
| 1,000+ | $1.31 | $1.31 |
| 2,500+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 450V at IC=1mA.
The device is available in TO-252-3, DPak (2 Leads + Tab), SC-63 surface-mount package, with a supplier device package of TO-252AA.
The operating junction temperature range is -40°C to 175°C.
The device is reported as RoHS3 Compliant, but this is unverified low-confidence data. The datasheet states Pb-Free and RoHS Compliant.
The continuous collector current is 41A at TC=25°C and 27A at TC=110°C, with VGE=5V.
The self-clamping inductive switching energy is 320mJ at TJ=25°C and 180mJ at TJ=150°C.
The maximum gate-emitter voltage is ±10V.