Nexperia USA Inc.

<p>The BAT54C,215 is a planar Schottky barrier diode array from Nexperia, featuring an integrated guard ring for stress protection. It contains two Schottky diodes in a common cathode configuration, encapsulated in a small SOT23 (TO-236AB) surface-mount plastic package.</p><p>&nbsp;</p><p>Key electrical specifications include a maximum reverse voltage of 30V, maximum forward current of 200mA (per diode), and low forward voltage drops: 240mV at 0.1mA, 320mV at 1mA, 400mV at 10mA, and 800mV at 100mA. Reverse current is limited to 2µA at VR=25V. The device offers ultra high-speed switching with a typical reverse recovery time of 5ns.</p><p>&nbsp;</p><p>Designed for applications such as ultra high-speed switching, line termination, voltage clamping, and reverse polarity protection, the BAT54C,215 operates over an ambient temperature range of -55°C to 150°C. Maximum power dissipation is 250mW at 25°C ambient when mounted on a standard FR4 PCB.</p>

<p>The BAW56,215 is a high-speed switching diode array from Nexperia USA Inc., featuring two diodes with a common anode configuration. It is designed for high-speed and general-purpose switching applications, offering a reverse voltage rating of 90V and a forward current of 215mA per diode.</p><p>&nbsp;</p><p>Key electrical characteristics include a maximum reverse recovery time of 4ns, ensuring fast switching performance, and a low forward voltage of 715mV at 1mA, 855mV at 10mA, 1V at 50mA, and 1.25V at 150mA. The device also features a low reverse current of 0.5µA at 80V and a total power dissipation of 250mW.</p><p>&nbsp;</p><p>The BAW56,215 is housed in a small SOT23 (TO-236AB) surface-mount plastic package, making it suitable for compact PCB designs. It operates over a junction temperature range of -65°C to 150°C and has a storage temperature range of -65°C to 150°C.</p>

<p>The BAV70,215 is a high-speed switching diode array from Nexperia, featuring two diodes in a common cathode configuration. It is designed for general-purpose switching and high-speed switching applications. The device is rated for a maximum reverse voltage of 100V and an average rectified current of 215mA per diode. It offers a low forward voltage of 1.25V at 150mA and a fast reverse recovery time of 4ns. The diode capacitance is 1.5pF typical. The device is housed in a small SOT-23-3 (TO-236AB) surface-mount package, making it suitable for compact designs. It is qualified to AEC-Q101 for automotive applications. The operating temperature range extends to 150°C. The BAV70,215 is listed as RoHS3 compliant and REACH unaffected.</p>

<p>The BAV99S,115 is a high-speed switching diode array from Nexperia, featuring two pairs of series-connected standard diodes. Designed for general-purpose switching and reverse polarity protection, it offers a reverse voltage of 100V and a forward current of 200mA per diode.</p><p>&nbsp;</p><p>With a reverse recovery time (trr) of 4 ns and low diode capacitance of 1.5 pF, this device is suitable for high-speed switching applications. The forward voltage is 1.25V maximum at 150mA, and the reverse current is 500nA maximum at 80V.</p><p>&nbsp;</p><p>The part is housed in a surface-mount SOT-363 (6-TSSOP, SC-88) package and operates at a maximum junction temperature of 150°C. It is qualified to AEC-Q101 automotive standard.</p>

<p>The BAV170 is a low-leakage double diode array in a small SOT23 plastic SMD package. The diodes are in common cathode configuration, making it suitable for low-leakage current applications in surface mounted circuits.</p><p>&nbsp;</p><p>Key electrical specifications include a maximum reverse voltage of 75V, repetitive peak reverse voltage of 85V, and forward current of 215mA when a single diode is loaded (125mA when both diodes are loaded). The device has a typical reverse leakage current of only 3 pA at 75V, and a maximum reverse recovery time of 3 µs. Total power dissipation is 250mW at ambient temperatures up to 25°C.</p><p>&nbsp;</p><p>The BAV170 is designed for low-leakage applications such as signal switching and protection circuits. It is housed in a SOT23 package with body dimensions 2.9mm x 1.3mm x 1mm and a 1.9mm pitch, suitable for surface mount assembly. The operating junction temperature range is -65°C to 150°C.</p>

<p>The BAT54SW,115 from Nexperia USA Inc. is a Schottky barrier diode array featuring two diodes in a series connection configuration.</p><p>&nbsp;</p><p>This device offers a maximum reverse voltage of 30V and a maximum forward current of 200mA. It exhibits a low forward voltage of 800mV at 100mA and a fast reverse recovery time of 5ns, making it suitable for high-speed switching applications.</p><p>&nbsp;</p><p>The diodes are housed in a compact SOT323 (SC-70) surface-mount package, ideal for space-constrained designs. The device is qualified to AEC-Q101 automotive standards.</p>

<p>The Nexperia BAS40-04,215 is a general-purpose dual Schottky diode in a small SOT23 Surface-Mounted Device (SMD) plastic package. It features high switching speed, low leakage current, high breakdown voltage, low capacitance, and is AEC-Q101 qualified.</p><p>&nbsp;</p><p>Key electrical characteristics include a maximum reverse voltage (VR) of 40V at 25°C, a maximum forward current (IF) of 120mA, and low forward voltage (VF) of 380mV typical at 1mA, 500mV at 10mA, and 1V at 40mA. Maximum reverse leakage current is 1µA at 30V and 10µA at 40V. Diode capacitance is 5pF typical at 0V.</p><p>&nbsp;</p><p>The device is suitable for ultra high-speed switching and voltage clamping applications. It is housed in a SOT-23-3 package (supplier device package TO-236AB) with surface mount mounting, and has a junction-to-ambient thermal resistance of 500 K/W. Operating junction temperature range is up to 150°C with an ambient range of -65°C to +150°C.</p>