| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,721,020 pcs
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3721020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
30,000 pcs
|
30000 pcs | On Request | 1 | On Request | On Request | 25+ | On Request | On Request |
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The Nexperia PDTC114ET-QR is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It comes in a compact SOT-23 surface-mounted device (SMD) plastic package.
Key electrical specifications include a collector-emitter voltage (VCEO) of 50V and an output current (IO) capability of 100mA. The transistor features built-in bias resistors with a typical R1 value of 10 kΩ and a typical R2/R1 ratio of 1. This design simplifies circuit construction, reduces component count, and lowers pick and place costs.
With a power dissipation of 250 mW at 25°C ambient temperature and a junction temperature up to 150°C, the PDTC114ET-QR is suitable for various applications. It is qualified according to AEC-Q101 and recommended for automotive use. The device operates within an ambient temperature range of -65°C to 150°C.
Mounting is via surface mount technology. The package is a TO-236-3, SC-59, SOT-23-3. This transistor serves as a cost-saving alternative for BC847-Q series in digital applications, controlling IC inputs, and switching loads.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.17 | $1.17 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PDTC114ET-QR is 50V.
The PDTC114ET-QR transistor has a maximum output current (IO) of 100mA.
The typical value for the built-in bias resistor R1 in the PDTC114ET-QR is 10 kΩ.
The PDTC114ET-QR is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The PDTC114ET-QR transistor is designed for surface mount installation.