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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,190 pcs
|
1190 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGPF4536 is a Trench-gate Insulated Gate Bipolar Transistor (IGBT) manufactured by On Semiconductor. It features a collector-emitter voltage (Vces) of 360V and a continuous collector current (Ic) rating of 220A. The device offers a low collector-emitter saturation voltage of 1.8V maximum at Vge=15V and Ic=50A, and a gate charge of 47nC.
This IGBT uses standard gate drive input and is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, suitable for isolated mounting. Power dissipation is rated at 28.4W.
Typical applications include power conversion circuits such as motor drives, inverters, and uninterruptible power supplies where Trench IGBT technology provides a balance of low conduction loss and switching performance.
| Qty | Low | High |
|---|---|---|
| 260+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) is 360V.
It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package.
RoHS status is listed as RoHS3 Compliant, but this is unverified low-confidence data.