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FGH75T65SQDNL4 The FGH75T65SQDNL4 is a 650V, 75A Trench Field Stop IGBT from On Semiconductor. It features low VCEsat of 1.6V typical and is packaged in a TO-247-4L through-hole package.
Mfr Part #:

FGH75T65SQDNL4

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGH75T65SQDNL4 is a 650V, 75A Trench Field Stop IGBT from On Semiconductor. It features low VCEsat of 1.6V typical and is packaged in a TO-247-4L through-hole package.
✓ Total Stock: 900 pcs
$ Price Range: $4.69 - $10.75

FGH75T65SQDNL4 Available from 1 distributor

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✓ Non-Authorised
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Smaxon Electronics ✓
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900 pcs
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900 pcs On Request 1 On Request On Request 2011+ On Request On Request
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FGH75T65SQDNL4 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage
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FGH75T65SQDNL4 Description

Short technical summary and product information.

The FGH75T65SQDNL4 is a 650V, 75A Trench Field Stop IGBT from On Semiconductor, designed for high-efficiency power switching applications. It features a low collector-emitter saturation voltage of 1.6V typical at 75A and 25°C, and 1.92V typical at 175°C. The device offers fast switching with typical turn-on and turn-off delay times of 44ns and 208ns respectively, and a gate charge of 152nC. It includes a co-packaged soft and fast freewheeling diode with 150A forward current capability at 25°C.

 

The IGBT is rated for continuous collector current of 150A at 25°C and 75A at 100°C, with a pulsed current capability of 300A. Maximum power dissipation is 375W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C. The device is housed in a TO-247-4L through-hole package with a separate emitter drive pin to minimize switching losses. It is Pb-Free and suitable for solar inverters, uninterruptible power supplies, and neutral point clamp topologies.

FGH75T65SQDNL4 Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGH75T65SQDNL4 - 650 V, 75 A Trench Field Stop IGBT with Diode
Subcategory: Single IGBT

FGH75T65SQDNL4 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGH75T65SQDNL4 Estimated Pricing

Qty Low High
1+ $10.75 $10.75
30+ $6.37 $6.37
120+ $5.41 $5.41
510+ $4.70 $4.70
1,020+ $4.69 $4.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

FGH75T65SQDNL4 Features

  • 650V collector-emitter breakdown voltage.
  • 75A continuous collector current at 100°C.
  • Low VCEsat of 1.6V typical.
  • Trench Field Stop technology for efficiency.
  • TO-247-4L package with separate emitter pin.

FGH75T65SQDNL4 Applications

  • Ideal for solar inverter applications.
  • Used in uninterruptible power supplies.
  • Suitable for neutral point clamp topologies.
  • High-speed switching power converters.

FGH75T65SQDNL4 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 650 V.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FGH75T65SQDNL4 available in?

It is available in a TO-247-4L through-hole package.

Is the FGH75T65SQDNL4 RoHS compliant?

The datasheet states it is Pb-Free, but RoHS compliance is unverified.

What is the typical collector-emitter saturation voltage?

The typical VCEsat is 1.6 V at 75A and 25°C.

What is the maximum continuous collector current at 100°C?

The maximum continuous collector current at 100°C is 75 A.

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