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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | 2011+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Diode Pulsed Forward Current | |
| Gate Charge | |
| IC (Maximum @ TC=100 °C) | |
| IC (Maximum @ Tc=25 °C) | |
| IF (Maximum @ TC=100 °C) | |
| IF (Maximum @ TC=25 °C) | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Number of Leads | |
| Operating Junction Temperature Range | |
| Operating Temperature | |
| PD (Maximum @ TC=100 °C) | |
| PD (Maximum @ Tc=25 °C) | |
| Power | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance (Diode) Junction-to-Case | |
| Thermal Resistance (IGBT) Junction-to-Case | |
| Thermal Resistance Junction-to-Ambient | |
| Turn-Off Delay Time | |
| Turn-Off Switching Energy | |
| VCEsat (Typical @ VGE=15 V, IC=75 A, TJ=175 °C) | |
| VCEsat (Typical/Maximum @ VGE=15 V, IC=75 A, TJ=25 °C) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH75T65SQDNL4 is a 650V, 75A Trench Field Stop IGBT from On Semiconductor, designed for high-efficiency power switching applications. It features a low collector-emitter saturation voltage of 1.6V typical at 75A and 25°C, and 1.92V typical at 175°C. The device offers fast switching with typical turn-on and turn-off delay times of 44ns and 208ns respectively, and a gate charge of 152nC. It includes a co-packaged soft and fast freewheeling diode with 150A forward current capability at 25°C.
The IGBT is rated for continuous collector current of 150A at 25°C and 75A at 100°C, with a pulsed current capability of 300A. Maximum power dissipation is 375W at 25°C case temperature. The operating junction temperature range is -55°C to 175°C. The device is housed in a TO-247-4L through-hole package with a separate emitter drive pin to minimize switching losses. It is Pb-Free and suitable for solar inverters, uninterruptible power supplies, and neutral point clamp topologies.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.75 | $10.75 |
| 30+ | $6.37 | $6.37 |
| 120+ | $5.41 | $5.41 |
| 510+ | $4.70 | $4.70 |
| 1,020+ | $4.69 | $4.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 650 V.
The operating junction temperature range is -55°C to 175°C.
It is available in a TO-247-4L through-hole package.
The datasheet states it is Pb-Free, but RoHS compliance is unverified.
The typical VCEsat is 1.6 V at 75A and 25°C.
The maximum continuous collector current at 100°C is 75 A.