IKQ50N120CH3XKSA1 Infineon IKQ50N120CH3XKSA1 is a high-speed switching IGBT rated for 1200V collector-emitter voltage and 100A collector current. It comes in a through-hole TO-247-3 package.
Mfr Part #:

IKQ50N120CH3XKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon IKQ50N120CH3XKSA1 is a high-speed switching IGBT rated for 1200V collector-emitter voltage and 100A collector current. It comes in a through-hole TO-247-3 package.
Total Stock: 1,170 pcs
$ Price Range: $5.45 - $10.89

IKQ50N120CH3XKSA1 Available from 1 distributor

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IKQ50N120CH3XKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Emitter Saturation Voltage (Typical @ Tvj=25 °C)
Current
Gate Charge
Industrial Grade
Input Type
Maximum Junction Temperature (Tvjmax)
Mounting Type
Operating Temperature
Power
Short Circuit Withstand Time
Storage Temperature
Supplier Device Package
Switching Energy
Switching Energy (Eoff)
Tape & Reel
Td (on
Test Condition
Turn-Off Delay Time (td(off))
Vce(on) (Max) @ Vge, Ic
Voltage

IKQ50N120CH3XKSA1 Description

Short technical summary and product information.

Infineon IKQ50N120CH3XKSA1 is a high-speed switching IGBT from the third-generation Highspeed3 technology family. It is co-packed with a soft, fast recovery full-current-rated anti-parallel emitter controlled diode. The device is rated for a maximum collector-emitter voltage of 1200 V, a maximum continuous collector current of 100 A, and a maximum power dissipation of 652 W.

 

The IGBT has a typical collector-emitter saturation voltage of 2 V at Tvj=25°C and a maximum VCEsat of 2.35 V at Vge=15V and Ic=50A. Gate charge is 235 nC. Typical switching energy is 3 mJ turn-on and 1.9 mJ turn-off under 600V, 50A, 10Ω, 15V test conditions. Turn-on delay time is 34 ns and turn-off delay time is 297 ns. The maximum junction temperature is 175°C, and the short circuit withstand time is 10 µs at Tvj=175°C.

 

The device has a standard input type and is intended for hard-switching and resonant topologies. Its positive temperature coefficient in VCEsat supports easy paralleling, and its low gate charge and low EMI characteristics are designed for high-speed switching applications. Common applications include industrial UPS, chargers, energy storage, three-level solar string inverters, and welding.

 

The part is supplied in a through-hole TO-247-3 package with supplier device package designation PG-TO247-3-46. Lead plating is Pb-free.

IKQ50N120CH3XKSA1 Quick Information

Product Type: Single IGBT
Series: Highspeed3
Canonical Name: Infineon IKQ50N120CH3XKSA1 High-Speed IGBT
Subcategory: Single IGBT

IKQ50N120CH3XKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IKQ50N120CH3XKSA1 Estimated Pricing

Qty Low High
1+ $10.89 $10.89
10+ $6.46 $6.46
100+ $5.49 $5.49
480+ $5.45 $5.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

IKQ50N120CH3XKSA1 Features

  • 1200V maximum collector-emitter voltage rating.
  • 100A maximum continuous collector current.
  • 175°C maximum junction temperature rating.
  • 10µs short circuit withstand capability.
  • Available in through-hole TO-247-3 package.

IKQ50N120CH3XKSA1 Applications

  • Used in industrial UPS systems.
  • Suitable for battery charger applications.
  • Fits energy storage power converters.
  • Ideal for three-level solar inverters.
  • Used in welding power equipment.

IKQ50N120CH3XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the IKQ50N120CH3XKSA1?

The maximum collector-emitter voltage is 1200 V.

What is the maximum continuous collector current?

The existing specification record lists a maximum continuous collector current of 100 A.

What is the operating temperature range?

The operating junction temperature range is -40°C to 175°C, with a maximum junction temperature of 175°C.

What is the collector-emitter saturation voltage?

Typical VCEsat is 2 V at Tvj=25°C; maximum VCEsat is 2.35 V at Vge=15V and Ic=50A.

What package does the IKQ50N120CH3XKSA1 use?

The part is available in a through-hole TO-247-3 package, with supplier device package PG-TO247-3-46.

What are the typical switching energy values?

Typical switching energy is 3 mJ turn-on and 1.9 mJ turn-off under 600V, 50A, 10Ω, 15V test conditions.

Is the IKQ50N120CH3XKSA1 RoHS compliant?

The datasheet states the part has Pb-free lead plating and is RoHS compliant.

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