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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,170 pcs
|
1170 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Emitter Saturation Voltage (Typical @ Tvj=25 °C) | |
| Current | |
| Gate Charge | |
| Industrial Grade | |
| Input Type | |
| Maximum Junction Temperature (Tvjmax) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Short Circuit Withstand Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (Eoff) | |
| Tape & Reel | |
| Td (on | |
| Test Condition | |
| Turn-Off Delay Time (td(off)) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
Infineon IKQ50N120CH3XKSA1 is a high-speed switching IGBT from the third-generation Highspeed3 technology family. It is co-packed with a soft, fast recovery full-current-rated anti-parallel emitter controlled diode. The device is rated for a maximum collector-emitter voltage of 1200 V, a maximum continuous collector current of 100 A, and a maximum power dissipation of 652 W.
The IGBT has a typical collector-emitter saturation voltage of 2 V at Tvj=25°C and a maximum VCEsat of 2.35 V at Vge=15V and Ic=50A. Gate charge is 235 nC. Typical switching energy is 3 mJ turn-on and 1.9 mJ turn-off under 600V, 50A, 10Ω, 15V test conditions. Turn-on delay time is 34 ns and turn-off delay time is 297 ns. The maximum junction temperature is 175°C, and the short circuit withstand time is 10 µs at Tvj=175°C.
The device has a standard input type and is intended for hard-switching and resonant topologies. Its positive temperature coefficient in VCEsat supports easy paralleling, and its low gate charge and low EMI characteristics are designed for high-speed switching applications. Common applications include industrial UPS, chargers, energy storage, three-level solar string inverters, and welding.
The part is supplied in a through-hole TO-247-3 package with supplier device package designation PG-TO247-3-46. Lead plating is Pb-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $10.89 | $10.89 |
| 10+ | $6.46 | $6.46 |
| 100+ | $5.49 | $5.49 |
| 480+ | $5.45 | $5.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 1200 V.
The existing specification record lists a maximum continuous collector current of 100 A.
The operating junction temperature range is -40°C to 175°C, with a maximum junction temperature of 175°C.
Typical VCEsat is 2 V at Tvj=25°C; maximum VCEsat is 2.35 V at Vge=15V and Ic=50A.
The part is available in a through-hole TO-247-3 package, with supplier device package PG-TO247-3-46.
Typical switching energy is 3 mJ turn-on and 1.9 mJ turn-off under 600V, 50A, 10Ω, 15V test conditions.
The datasheet states the part has Pb-free lead plating and is RoHS compliant.