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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current DC (@ Tc=100 °C) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=75 A, VGE=15 V) | |
| Current | |
| Diode Forward Current DC (@ Tc=100 °C) | |
| Diode Forward Current DC (@ Tc=25 °C) | |
| Gate Charge | |
| Gate Threshold Voltage (Min/Typ/Max) | |
| Gate-to-Emitter Voltage | |
| IGBT Type | |
| Input Capacitance | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Pulsed Collector Current | |
| Pulsed Diode Forward Current | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Case (Diode) | |
| Thermal Resistance Junction-to-Case (IGBT) | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH75T65UPD-F155 is a 650V, 75A Field Stop Trench IGBT designed for high efficiency power conversion applications. It utilizes advanced trench field stop technology to achieve low conduction and switching losses, making it suitable for solar inverters, UPS systems, and digital power generators.
Key electrical specifications include a collector-to-emitter voltage of 650V, continuous collector current of 150A at 25°C (75A at 100°C), and a typical saturation voltage of 1.65V at 75A. The device also features a fast switching diode with a reverse recovery time of 85 ns and short circuit withstand time of 5 µs at 25°C.
The IGBT is housed in a TO-247-3 through-hole package, offering robust thermal performance with a junction-to-case thermal resistance of 0.40°C/W for the IGBT and 0.86°C/W for the diode. The operating junction temperature range is -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 450+ | $4.22 | $4.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vces) is 650 V.
The device is supplied in a TO-247-3 through-hole package.
-55°C to 175°C.
Yes, it is RoHS compliant as per the datasheet.
The gate threshold voltage (Vge(th)) is 4.0V (min), 6.0V (typ), 7.5V (max) at Ic=75mA, Vce=Vge.
375W at Tc=25°C and 187W at Tc=100°C.
5 µs at Tc=25°C.