| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FGY75N60SMD is a 600V, 150A Field Stop IGBT from On Semiconductor, designed for high-efficiency switching applications.
Electrical characteristics include a maximum collector-emitter voltage of 600V, continuous collector current of 150A, and power dissipation of 750W. The saturation voltage is 2.5V at 15V gate drive and 75A collector current. Gate charge is 248 nC. Switching performance: turn-on delay 24 ns, turn-off delay 136 ns, turn-on energy 2.3 mJ, turn-off energy 770 µJ. Reverse recovery time is 55 ns.
The device is housed in a through-hole TO-247-3 variant (PowerTO-247-3) package. Operating junction temperature range is -55°C to 175°C.
Typical applications include motor drives, inverters, power supplies, and other high-power switching circuits requiring low conduction and switching losses.
| Qty | Low | High |
|---|---|---|
| 350+ | $7.14 | $7.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
TO-247-3 variant (PowerTO-247-3).
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
150 A.
248 nC.
2.3 mJ at 400V, 75A, 3Ω, 15V.