Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage | |
| Collector Current (Maximum @ TC=100 °C) | |
| Collector Emitter Saturation Voltage (Typical/Maximum @ Vge=15 V, Ic=40 A) | |
| Collector-Emitter Cut-off Current | |
| Current | |
| Delay Time (Off) | |
| Diode Forward Current (Maximum @ TC=100 °C) | |
| Diode Forward Current (Maximum @ TC=25 °C) | |
| Gate Charge | |
| Gate Leakage Current | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| Industrial Grade | |
| Input Type | |
| MSL (Moisture Sensitivity Level) | |
| Maximum Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| SVHC Present | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction To Case (Typical/Maximum @ Diode) | |
| Thermal Resistance Junction To Case (Typical/Maximum @ IGBT) | |
| Thermal Resistance Junction-to-Ambient | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGH4L40T120LQD is an Insulated Gate Bipolar Transistor (IGBT) from onsemi, utilizing Ultra Field Stop Trench technology. It is rated for a maximum collector-emitter voltage of 1200V and a continuous collector current of 80A at 25°C (40A at 100°C). The device integrates a soft and fast free-wheeling diode with low forward voltage.
Key electrical characteristics include a typical collector-emitter saturation voltage of 1.55V at 15V gate drive and 40A, and a maximum of 1.8V. Switching losses are optimized with typical turn-on energy of 1.04mJ and turn-off energy of 1.35mJ under inductive load conditions. The gate charge is 227nC typical.
The IGBT is designed for applications such as solar inverters, UPS systems, industrial switching, and welding. It offers a maximum junction temperature of 175°C and thermal resistance of 0.38°C/W (IGBT) and 0.64°C/W (diode) typical.
The device is housed in a TO-247-4L package with through-hole mounting. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). The standard package quantity is 30 units per rail.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.54 | $9.54 |
| 10+ | $6.55 | $6.55 |
| 450+ | $4.33 | $4.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
1200V.
TO-247-4L (TO-247-4).
-55°C to 175°C (junction temperature).
Yes, RoHS3 compliant.
1.55V at Vge=15V, Ic=40A.
306W.
227 nC typical at 600V, 40A, 10Ω, 15V.