Mfr Part #:

HGTG7N60A4D

The HGTG7N60A4D is a 600V, 34A N-Channel IGBT with an anti-parallel hyperfast diode, designed for high-frequency switch mode power supplies. It is housed in a TO-247 package and dissipates up to 125W.

✓ Total Stock: 994 pcs

$ Price Range: $1.32

HGTG7N60A4D Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	900 pcs On Request	900 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Hybrid Electronics ✓ Non-Authorised Inventory information	94 pcs On Request	94 pcs	On Request	1	On Request	On Request	2000	On Request	On Request

HGTG7N60A4D Description

Short technical summary and product information.

The HGTG7N60A4D is a MOS-gated high-voltage switching device that combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor. It features a 600V collector-to-emitter voltage rating and a continuous collector current of 34A at 25°C. The device includes an anti-parallel hyperfast diode, making it suitable for high-frequency switching applications.

Key electrical characteristics include a typical gate charge of 37 nC, a maximum Vce(on) of 2.7V at 15V gate voltage and 7A collector current, and typical switching energies of 55 µJ (turn-on) and 60 µJ (turn-off). The device is capable of operation above 100 kHz at 390V and 7A, with a typical fall time of 75 ns at 125°C junction temperature.

The HGTG7N60A4D is packaged in a TO-247 through-hole package and operates over a junction temperature range of -55°C to 150°C. It is optimized for high-frequency switch mode power supplies and other high-voltage switching applications where low conduction losses are essential.

HGTG7N60A4D Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)

Canonical Name: HGTG7N60A4D 600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

Subcategory: Single IGBT with Diode

HGTG7N60A4D Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

HGTG7N60A4D Estimated Pricing

Qty	Low	High
450+	$1.32	$1.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGTG7N60A4D Features

600V collector-to-emitter voltage rating.
34A continuous collector current at 25°C.
125W maximum power dissipation capability.
Anti-parallel hyperfast diode included.
TO-247 through-hole package for easy mounting.

HGTG7N60A4D Applications

High-frequency switch mode power supplies.
UPS and inverter power stages.
Motor drive circuits up to 600V.
Induction heating and welding equipment.

HGTG7N60A4D FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-to-emitter voltage of the HGTG7N60A4D?

The maximum collector-to-emitter voltage (Vces) is 600V.

What is the continuous collector current rating of this IGBT?

The continuous collector current (Ic) is 34A at a case temperature of 25°C.

What package is the HGTG7N60A4D available in?

The HGTG7N60A4D is available in a TO-247 through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Does the HGTG7N60A4D include a built-in diode?

Yes, it includes an anti-parallel hyperfast diode.

What is the typical gate charge of this device?

The typical gate charge (Qg) is 37 nC.

What is the maximum power dissipation of the HGTG7N60A4D?

The maximum power dissipation (Pd) is 125W.

Category	Transistors - IGBTs - Single
Manufacturer Name	On Semiconductor
Current	34 A
Gate Charge	37 nC
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power	125 W
Reverse Recovery Time (trr)	34 ns
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-247-3
Switching Energy	55µJ (on), 60µJ (off)
Td (on	11 ns
Test Condition	390V, 7A, 25Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.7 V
Voltage	600 V