HGT1S10N120BNS HGT1S10N120BNS is a 1200V, 35A NPT IGBT from ON Semiconductor in a surface mount TO-263 package.
Mfr Part #:

HGT1S10N120BNS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
HGT1S10N120BNS is a 1200V, 35A NPT IGBT from ON Semiconductor in a surface mount TO-263 package.
Total Stock: 800 pcs
$ Price Range: $2.76

HGT1S10N120BNS Available from 1 distributor

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HGT1S10N120BNS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
Halogen Free
IGBT Type
Input Type
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Switching Energy
Switching Energy (Eoff)
Tape & Reel
Td (on
Test Condition
Turn-Off Delay Time (td(off))
Vce(on) (Max) @ Vge, Ic
Voltage

HGT1S10N120BNS Description

Short technical summary and product information.

The HGT1S10N120BNS is an NPT (Non-Punch Through) IGBT from ON Semiconductor, designed for high voltage switching applications. It features a collector-emitter voltage rating of 1200V and a continuous collector current of 35A, with a power dissipation of 298W. The device offers a typical collector-emitter saturation voltage of 2.7V at 15V gate drive and 10A collector current.

 

Switching performance is characterized by a turn-on energy of 320 µJ and turn-off energy of 800 µJ under test conditions of 960V, 10A, 10Ω gate resistance, and 15V gate voltage. Turn-on delay time is 23 ns and turn-off delay time is 165 ns. The gate charge is 100 nC, facilitating efficient gate drive design.

 

The IGBT is housed in a surface mount TO-263-3 package, also known as D²Pak with 2 leads and tab, and is supplied in a D²PAK (TO-263) variant. It operates over a junction temperature range of -55°C to 150°C. This component is suitable for applications such as motor drives, inverters, and power supplies where high voltage and current handling are required.

HGT1S10N120BNS Quick Information

Product Type: IGBT
Series: HGT1S10N120BNS
Canonical Name: HGT1S10N120BNS - NPT IGBT, 1200V, 35A, TO-263 (D²Pak)
Subcategory: NPT IGBT

HGT1S10N120BNS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

HGT1S10N120BNS Estimated Pricing

Qty Low High
499+ $2.76 $2.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

HGT1S10N120BNS Features

  • 1200V collector-emitter voltage rating.
  • 35A continuous collector current capability.
  • NPT technology for rugged switching.
  • Surface mount TO-263 package.
  • Low Vce(sat) of 2.7V typical.

HGT1S10N120BNS Applications

  • Used in motor drive inverters.
  • Suitable for uninterruptible power supplies.
  • Ideal for induction heating applications.
  • Applied in welding equipment.
  • Used in power factor correction circuits.

HGT1S10N120BNS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

1200V.

What is the maximum collector current?

35A.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this IGBT available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Is this device RoHS compliant?

According to available data, it is marked as RoHS3 Compliant, but this has not been verified from official documentation.

What is the gate charge?

100 nC.

What are the switching energies?

Turn-on energy is 320 µJ and turn-off energy is 800 µJ at 960V, 10A, 10Ω, 15V.

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