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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
780 pcs
|
780 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Average Diode Forward Current | |
| Collector Current (@ TC = 110 °C) | |
| Collector Current (Pulsed) | |
| Collector-Emitter Leakage Current (Maximum @ VCE = BVCES, TC = 150 °C) | |
| Collector-Emitter Leakage Current (Maximum @ VCE = BVCES, TC = 25 °C) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 30 A, VGE = 15 V, TC = 150 °C) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ IC = 30 A, VGE = 15 V, TC = 25 °C) | |
| Current | |
| Emitter to Collector Breakdown Voltage | |
| Gate Charge | |
| Gate-Emitter Voltage (Continuous) | |
| Gate-Emitter Voltage (Pulsed) | |
| Input Type | |
| Maximum Lead Temperature for Soldering | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation Derating | |
| Reverse Recovery Time (trr) | |
| Short Circuit Withstand Time (@ VGE = 10 V) | |
| Short Circuit Withstand Time (@ VGE = 15 V) | |
| Supplier Device Package | |
| Switching Energy | |
| Switching Energy (off) | |
| Switching Safe Operating Area | |
| Typical Fall Time | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. It has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The device is rated for 600V collector-emitter voltage (Vces) and 63A continuous collector current at 25°C, with 30A at 110°C. It features a typical fall time of 230ns at 150°C and a short circuit withstand time of 4µs at VGE=15V. The anti-parallel hyperfast diode provides efficient freewheeling. The IGBT is housed in a TO-247-3 through-hole package, suitable for moderate frequency switching applications requiring low conduction losses. It is a Pb-Free device.
| Qty | Low | High |
|---|---|---|
| 450+ | $6.12 | $6.12 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 600V.
The package is TO-247-3, a through-hole mounting type.
The operating junction temperature range is -40°C to 150°C.
The datasheet states the device is Pb-Free, indicating RoHS compliance, though the RoHS status from existing_db is unverified.
The maximum continuous collector current is 63A at TC = 25°C, and 30A at TC = 110°C.
The typical fall time is 230ns at a junction temperature of 150°C.
Yes, it includes a hyperfast anti-parallel diode for freewheeling.