Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
480 pcs
|
480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current DC (Nominal @ TC = 100 ° C) | |
| Collector Current DC (Nominal @ TC = 25 ° C) | |
| Collector Emitter Leakage (Maximum @ VCE =600 V, VGE =0 V, Tj=150 ° C) | |
| Collector Emitter Leakage (Maximum @ VCE =600 V, VGE =0 V, Tj=25 ° C) | |
| Collector-Emitter Breakdown Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| Diode Forward Current DC (Nominal @ TC = 100 ° C) | |
| Diode Forward Current DC (Nominal @ TC = 25 ° C) | |
| Diode Pulsed Current | |
| Diode thermal resistance, junction – case | |
| Forward Voltage (Maximum @ VGE =0 V, IF=15 A, Tj=150 ° C) | |
| Forward Voltage (Maximum @ VGE =0 V, IF=15 A, Tj=25 ° C) | |
| Gate Charge | |
| Gate Charge (Unspecified condition) | |
| Gate-Emitter Leakage Current | |
| Gate-Emitter Threshold Voltage | |
| Gate-Emitter Voltage | |
| IGBT Type | |
| IGBT thermal resistance, junction – case | |
| Input Capacitance | |
| Input Type | |
| Internal Emitter Inductance (Typical @ measured 5 mm (0.197 in.) from case, TO -220 AB) | |
| Internal Emitter Inductance (Typical @ measured 5 mm (0.197 in.) from case, TO -247 AC) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Nominal @ TC=25 °C) | |
| Pulsed Collector Current | |
| Reverse Recovery Time (trr) | |
| Reverse Transfer Capacitance | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC=15 A, Tj=150 ° C) | |
| Saturation Voltage (Maximum @ VGE = 15 V, IC=15 A, Tj=25 ° C) | |
| Short Circuit Withstand Time | |
| Short circuit collector current | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Thermal Resistance Junction Ambient (Maximum @ SMD version, device on PCB) | |
| Thermal Resistance Junction Ambient (Maximum @ TO -220 AB) | |
| Thermal Resistance Junction Ambient (Maximum @ TO -247 AC) | |
| Transconductance | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SKW15N60 from Infineon Technologies is a fast IGBT (Insulated Gate Bipolar Transistor) utilizing NPT technology, designed for high-voltage applications up to 600V. This component is particularly suited for motor controls and inverter applications, offering a combination of low conduction losses and reduced switching energy (Eoff) compared to previous generations.
Key electrical specifications include a continuous collector current of 31A at 25°C (15A at 100°C) and a collector-emitter breakdown voltage of 600V. The device exhibits a typical saturation voltage of 2.4V at 15V gate-emitter voltage and 15A collector current. It also features a soft, fast recovery anti-parallel EmCon diode.
With a power dissipation rating of 139W at 25°C, the SKW15N60 operates across a wide temperature range from -55°C to 150°C. It is housed in a TO-247-3 package, suitable for through-hole mounting. The short circuit withstand time is rated at 10 µs, ensuring ruggedness in demanding conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCE) for the SKW15N60 is 600V.
The continuous collector current (IC) for the SKW15N60 is 31A at 25°C and 15A at 100°C.
The power dissipation (Ptot) for the SKW15N60 at 25°C is 139W.
The operating junction and storage temperature range for the SKW15N60 is -55°C to 150°C.
The SKW15N60 is supplied in a TO-247-3 package.
The typical gate charge (Q Gate) for the SKW15N60 is 76nC.