What are Transistors - FETs, MOSFETs - Single ?
Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
Parts in this category
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Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay
|
50
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Price on request
50
|
5.2A (Tc) | 200 V | 4V, 5V | - | N-Channel | 16 nC @ 5 V | 360 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 50W (Tc) | 800mOhm @ 3.1A, 5V | TO-220AB | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
On Semiconductor
|
50
|
Price on request
50
|
10.5A (Ta), 54A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 19 nC @ 10 V | 1338 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 3W (Ta), 79W (Tc) | 12.2mOhm @ 14A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2.2V @ 282µA | |
Infineon Technologies
|
50
|
Price on request
50
|
18A (Tc) | 200 V | 10V | - | N-Channel | 29 nC @ 10 V | 1200 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 100W (Tc) | 105mOhm @ 11A, 10V | TO-262 | MOSFET (Metal Oxide) | ±20V | 4.9V @ 100µA | |
UnitedSiC
|
50
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Price on request
50
|
54A (Tc) | 650 V | 12V | - | N-Channel | 43 nC @ 12 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 326W (Tc) | 52mOhm @ 40A, 12V | TO-247-4 | - | ±25V | 6V @ 10mA | |
Vishay
|
50
|
Price on request
50
|
5.1A (Tc) | 60 V | 10V | - | P-Channel | 12 nC @ 10 V | 270 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 2.5W (Ta), 25W (Tc) | 500mOhm @ 3.1A, 10V | TO-251AA | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
IXYS
|
50
|
Price on request
50
|
3.6A (Tc) | 500 V | 10V | - | N-Channel | 9.3 nC @ 10 V | 409 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 70W (Tc) | 2Ohm @ 1.8A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 5.5V @ 50µA | |
IXYS
|
50
|
Price on request
50
|
48A (Tc) | 500 V | 10V | - | N-Channel | 330 nC @ 10 V | 9400 pF @ 25 V | Through Hole | -40°C ~ 150°C (TJ) | 400W (Tc) | 90mOhm @ 27.5A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 4.5V @ 8mA | |
|
Vishay
|
50
|
Price on request
50
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90A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 257 nC @ 10 V | 12065 pF @ 15 V | Through Hole | -55°C ~ 175°C (TJ) | 3.75W (Ta), 250W (Tc) | 2.9mOhm @ 28.8A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
|
Toshiba
|
50
|
Price on request
50
|
13.7A (Ta) | 650 V | 10V | - | N-Channel | 40 nC @ 10 V | 1300 pF @ 300 V | Through Hole | 150°C (TJ) | 40W (Tc) | 300mOhm @ 6.9A, 10V | TO-220SIS | MOSFET (Metal Oxide) | ±30V | 4.5V @ 690µA | |
Vishay
|
50
|
Price on request
50
|
11A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 24 nC @ 5 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W (Ta) | 7mOhm @ 16A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 1.6V @ 250µA | |
Renesas
|
50
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Price on request
50
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45A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 27 nC @ 4.5 V | 4300 pF @ 10 V | Surface Mount | 150°C (TJ) | 55W (Tc) | 2.7mOhm @ 22.5A, 10V | LFPAK | MOSFET (Metal Oxide) | ±20V | - | |
Diodes Incorporated
|
50
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Price on request
50
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4A (Tc) | 650 V | 10V | - | N-Channel | 13.5 nC @ 10 V | 900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 8.35W (Ta) | 3Ohm @ 2A, 10V | ITO-220AB | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Infineon Technologies
|
50
|
Price on request
50
|
4A (Tc) | 800 V | 10V | - | N-Channel | 10 nC @ 10 V | 250 pF @ 500 V | Through Hole | -55°C ~ 150°C (TJ) | 24W (Tc) | 1.4Ohm @ 1.4A, 10V | PG-TO220-3-31 Full Pack | MOSFET (Metal Oxide) | ±20V | 3.5V @ 70µA | |
Vishay
|
49
|
Price on request
49
|
36A (Tc) | 500 V | 10V | - | N-Channel | 180 nC @ 10 V | 5579 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 446W (Tc) | 130mOhm @ 22A, 10V | SUPER-247™ (TO-274AA) | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Vishay
|
49
|
Price on request
49
|
6.5A (Tc) | 200 V | 10V | - | P-Channel | 29 nC @ 10 V | 700 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 3W (Ta), 74W (Tc) | 800mOhm @ 3.9A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
48
|
Price on request
48
|
14A (Ta), 27A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 27 nC @ 10 V | 1680 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta), 37.8W (Tc) | 9mOhm @ 14A, 10V | 8-MLP (5x6), Power56 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
IXYS
|
48
|
Price on request
48
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320A (Tc) | 100 V | 10V | - | N-Channel | 430 nC @ 10 V | 26000 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 1000W (Tc) | 3.5mOhm @ 100A, 10V | TO-268AA | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
|
48
|
Price on request
48
|
14A (Tc) | 250 V | 10V | - | N-Channel | 54 nC @ 10 V | 1060 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 150W (Tc) | 240mOhm @ 8.4A, 10V | D²PAK (TO-263) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Nexperia USA Inc.
|
48
|
Price on request
48
|
870mA (Tc) | 30 V | 4.5V | - | N-Channel | 0.65 nC @ 4.5 V | 37 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 560mW (Tc) | 440mOhm @ 200mA, 4.5V | SOT-323 | MOSFET (Metal Oxide) | ±12V | 1.5V @ 250µA | |
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Vishay
|
48
|
Price on request
48
|
6.2A (Tc) | 600 V | 10V | - | N-Channel | 60 nC @ 10 V | 1300 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 125W (Tc) | 1.2Ohm @ 3.7A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
|
48
|
Price on request
48
|
12A (Tc) | 30 V | 4.5V, 10V | - | P-Channel | 45 nC @ 10 V | 1400 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta), 31W (Tc) | 20mOhm @ 6.6A, 10V | PowerPAK® ChipFET™ Single | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Vishay
|
48
|
Price on request
48
|
10.5A (Ta) | 40 V | 4.5V, 10V | - | N-Channel | 23 nC @ 4.5 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.5W (Ta) | 7.8mOhm @ 16.4A, 10V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Microchip Technology
|
47
|
Price on request
47
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125mA (Tj) | 400 V | 4.5V, 10V | - | P-Channel | - | 125 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.6W (Ta) | 25Ohm @ 100mA, 10V | TO-243AA (SOT-89) | MOSFET (Metal Oxide) | ±20V | 2.4V @ 1mA | |
|
On Semiconductor
|
47
|
Price on request
47
|
8A (Tc) | 500 V | 10V | - | N-Channel | 53 nC @ 10 V | 1800 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 134W (Tc) | 800mOhm @ 4A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 4V @ 250µA | |
Infineon Technologies
|
47
|
Price on request
47
|
171A (Tc) | 150 V | 10V | - | N-Channel | 227 nC @ 10 V | 10470 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 517W (Tc) | 5.9mOhm @ 103A, 10V | TO-247AD | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
|
47
|
Price on request
47
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5.5A (Ta) | 20 V | 1.8V, 4.5V | - | P-Channel | 17.2 nC @ 4.5 V | 1450 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.1W (Ta) | 45mOhm @ 5A, 4.5V | 6-TSOP | MOSFET (Metal Oxide) | ±8V | 1V @ 250µA | |
Vishay
|
46
|
Price on request
46
|
4A (Tc) | 30 V | 2.5V, 10V | - | N-Channel | 13.5 nC @ 10 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 2.8W (Tc) | 45mOhm @ 3.7A, 10V | SC-70-6 | MOSFET (Metal Oxide) | ±12V | 1.3V @ 250µA | |
Vishay
|
46
|
Price on request
46
|
4.3A (Tc) | 200 V | 10V | - | P-Channel | 29 nC @ 10 V | 700 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 35W (Tc) | 800mOhm @ 2.6A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Texas Instruments
|
45
|
Price on request
45
|
17A (Ta), 100A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 36 nC @ 10 V | 2750 pF @ 30 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.2W (Ta), 116W (Tc) | 5.9mOhm @ 18A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | ±20V | 2.3V @ 250µA | |
|
Nexperia USA Inc.
|
45
|
Price on request
45
|
375mA (Ta) | 240 V | 4.5V, 10V | - | N-Channel | - | 120 pF @ 25 V | Surface Mount | 150°C (TJ) | 1.5W (Ta) | 5Ohm @ 340mA, 10V | SOT-223 | MOSFET (Metal Oxide) | ±20V | 2V @ 1mA | |
IXYS
|
45
|
Price on request
45
|
36A (Tc) | 500 V | - | - | N-Channel | - | - | Chassis Mount | - | 400W (Tc) | - | SOT-227B | MOSFET (Metal Oxide) | - | 4V @ 20mA | |
STMicroelectronics
|
45
|
Price on request
45
|
120A (Tc) | 75 V | 10V | - | N-Channel | 85 nC @ 10 V | 6750 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 330W (Tc) | 4mOhm @ 60A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Vishay
|
45
|
Price on request
45
|
8.1A (Tc) | 250 V | 10V | - | N-Channel | 41 nC @ 10 V | 770 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 74W (Tc) | 450mOhm @ 5.1A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Texas Instruments
|
45
|
Price on request
45
|
100A (Ta) | 80 V | 6V, 10V | - | N-Channel | 62 nC @ 10 V | 4870 pF @ 40 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta), 195W (Tc) | 4.1mOhm @ 19A, 10V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | ±20V | 3.3V @ 250µA | |
On Semiconductor
|
45
|
Price on request
45
|
75A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 156 nC @ 10 V | 4900 pF @ 25 V | Surface Mount | -40°C ~ 150°C (TJ) | 270W (Tc) | 4.5mOhm @ 75A, 10V | TO-263AB | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Nexperia USA Inc.
|
44
|
Price on request
44
|
120A (Tc) | 80 V | 10V | - | N-Channel | 139 nC @ 10 V | 9961 pF @ 40 V | Through Hole | -55°C ~ 175°C (TJ) | 338W (Tc) | 3.5mOhm @ 25A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
|
On Semiconductor
|
44
|
Price on request
44
|
32A (Tc) | 200 V | 10V | - | N-Channel | 120 nC @ 10 V | 5000 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 180W (Tc) | 75mOhm @ 16A, 10V | TO-247 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Infineon Technologies
|
44
|
Price on request
44
|
120A (Tc) | 60 V | 10V | - | N-Channel | 120 nC @ 10 V | 4520 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 230W (Tc) | 4.2mOhm @ 75A, 10V | TO-262 | MOSFET (Metal Oxide) | ±20V | 4V @ 150µA | |
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Vishay
|
43
|
Price on request
43
|
12A (Tc) | 100 V | 10V | - | P-Channel | 38 nC @ 10 V | 860 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 88W (Tc) | 300mOhm @ 7.2A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
42
|
Price on request
42
|
115mA (Tc) | 60 V | 5V, 10V | - | N-Channel | - | 50 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 200mW (Ta) | 7.5Ohm @ 500mA, 10V | SOT-23-3 | MOSFET (Metal Oxide) | ±20V | 3V @ 1mA | |
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Vishay
|
42
|
Price on request
42
|
10A (Tc) | 60 V | 10V | - | N-Channel | 11 nC @ 10 V | 300 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 43W (Tc) | 200mOhm @ 6A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
ALPHA & OMEGA SEMICONDU CTOR
|
42
|
Price on request
42
|
900mA (Ta), 2.5A (Tc) | 300 V | 10V | - | N-Channel | 5.6 nC @ 10 V | 240 pF @ 25 V | Surface Mount | -50°C ~ 150°C (TJ) | 3.1W (Ta), 25W (Tc) | 1.5Ohm @ 900mA, 10V | 8-DFN-EP (3x3) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
Microsemi Corporation
|
41
|
Price on request
41
|
3.5A (Tc) | 100 V | 10V | - | N-Channel | 8.1 nC @ 10 V | - | Through Hole | -55°C ~ 150°C (TJ) | 800mW (Ta), 15W (Tc) | 600mOhm @ 2.25A, 10V | TO-39 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
IXYS
|
41
|
Price on request
41
|
4A (Tc) | 1000 V | 10V | - | N-Channel | 39 nC @ 10 V | 1050 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 150W (Tc) | 3Ohm @ 2A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 5V @ 1.5mA | |
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Vishay
|
41
|
Price on request
41
|
1.8A (Tc) | 200 V | 10V | - | P-Channel | 11 nC @ 10 V | 170 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 20W (Tc) | 3Ohm @ 900mA, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
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Vishay
|
41
|
Price on request
41
|
3.6A (Tc) | 600 V | 10V | - | N-Channel | 31 nC @ 10 V | 660 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 74W (Tc) | 2.2Ohm @ 2.2A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Diodes Incorporated
|
41
|
Price on request
41
|
12A (Ta) | 20 V | 2.5V, 10V | - | N-Channel | 58.3 nC @ 10 V | 2555 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 2W (Ta) | 8mOhm @ 12A, 10V | 8-SO | MOSFET (Metal Oxide) | ±12V | 1.2V @ 250µA | |
STMicroelectronics
|
41
|
Price on request
41
|
80A (Tc) | 55 V | 10V | - | N-Channel | 45 nC @ 10 V | 2200 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 110W (Tc) | 8.5mOhm @ 32A, 10V | I-PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
41
|
Price on request
41
|
8.4A (Ta), 68A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 80 nC @ 10 V | 2400 pF @ 24 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.04W (Ta), 75W (Tc) | 10mOhm @ 20A, 10V | DPAK | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
|
Toshiba
|
40
|
Price on request
40
|
3A (Ta) | 500 V | 10V | - | N-Channel | 7 nC @ 10 V | 280 pF @ 25 V | Surface Mount | 150°C (TJ) | 60W (Tc) | 3Ohm @ 1.5A, 10V | DPAK | MOSFET (Metal Oxide) | ±30V | 4.4V @ 1mA |
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