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RF1S23N06LESM The Harris Corporation RF1S23N06LESM is an N-Channel Power MOSFET designed for various electronic applications. It offers a 60V drain-source voltage and a continuous drain current of 23A.
Mfr Part #:

RF1S23N06LESM

Available from 1 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
The Harris Corporation RF1S23N06LESM is an N-Channel Power MOSFET designed for various electronic applications. It offers a 60V drain-source voltage and a continuous drain current of 23A.
✓ Total Stock: 1,600 pcs
$ Price Range: $2.27

RF1S23N06LESM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Hybrid Electronics ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request 98 On Request On Request
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RF1S23N06LESM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Mounting Type
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
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RF1S23N06LESM Description

Short technical summary and product information.

The RF1S23N06LESM from Harris Corporation is an N-Channel Power MOSFET. This component is designed with a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 23A at 25°C. It utilizes MOSFET (Metal Oxide) technology.

 

The device is available in a surface mount package, specifically the TO-263AB, which is also referred to as TO-263-3, D²Pak (2 Leads + Tab), TO-263AB. This mounting type is suitable for applications requiring compact and efficient board layouts.

 

This MOSFET is suitable for a range of power switching and amplification applications where its electrical characteristics and package type are beneficial. Its N-Channel configuration makes it a versatile component for many circuit designs.

RF1S23N06LESM Quick Information

Product Type: MOSFET
Canonical Name: Harris Semiconductor RF1S23N06LESM N-Channel Power MOSFET
Subcategory: MOSFET

RF1S23N06LESM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RF1S23N06LESM Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

RF1S23N06LESM Features

  • N-Channel Power MOSFET with 60V rating.
  • Surface mount package for easy installation.
  • Handles continuous drain current of 23A.
  • Manufactured by Harris Semiconductor.
  • Packaged in TO-263AB case for reliability.

RF1S23N06LESM Applications

  • Suitable for high-current power switching applications.
  • Used in motor control and power supply circuits.
  • Ideal for load switching in industrial equipment.
  • Applicable in DC-DC converter designs.
  • Suitable for automotive and consumer electronics.

RF1S23N06LESM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the RF1S23N06LESM?

The drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current (Id) for the RF1S23N06LESM?

The continuous drain current (Id) is 23A at 25°C.

What type of MOSFET is the RF1S23N06LESM?

The RF1S23N06LESM is an N-Channel MOSFET.

What technology does the RF1S23N06LESM use?

It uses MOSFET (Metal Oxide) technology.

What is the mounting type for the RF1S23N06LESM?

The mounting type is Surface Mount.

What package is the RF1S23N06LESM supplied in?

The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

What is the Moisture Sensitivity Level (MSL) for this part?

The MSL is 1 Unlimited.

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