| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | 98+ | On Request | On Request |
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The IRLZ24STRL is an N-Channel enhancement-mode Power MOSFET from Vishay Siliconix, designed for logic-level gate drive operation with on-resistance specified at Vgs = 4V and 5V. It features a maximum drain-source voltage of 60V and a continuous drain current of 17A at Tc=25°C, with pulsed current capability up to 68A.
This MOSFET is built on third-generation Power MOSFET technology, offering fast switching, low on-resistance (100 mOhm max at Id=10A, Vgs=5V), and a ruggedized design including single pulse avalanche energy rating of 110 mJ and peak diode recovery dV/dt of 4.5 V/ns. The gate charge is 18 nC (max) at Vgs=5V, with input capacitance of 870 pF.
The device operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 60W at Tc=25°C. It supports surface mount assembly with MSL Level 1 (unlimited) floor life and is available in tape and reel packaging.
60 V.
17 A at Tc=25°C and 12 A at Tc=100°C.
100 mOhm maximum at Id=10A, Vgs=5V.
D2PAK (TO-263) surface mount package.
-55°C to 175°C.