| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,600 pcs
|
1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDB6030BL is an N-Channel MOSFET manufactured by On Semiconductor (onsemi). It is designed for applications requiring efficient switching and low conduction losses.
Key specifications include a maximum drain-source voltage of 30V and a continuous drain current of 40A at case temperature. The device features a low drain-source on-resistance of 18mOhm at 10V gate drive, enabling high efficiency in power conversion circuits. Gate charge is 17nC and input capacitance is 1160pF, ensuring fast switching performance.
The MOSFET is housed in a TO-263-3 (D²Pak) surface mount package, suitable for automated assembly. It operates over a wide junction temperature range of -65°C to 175°C, making it reliable in harsh environments.
The maximum drain-source voltage (Vdss) is 30V.
The FDB6030BL is available in a surface mount TO-263-3 (D²Pak) package.
The junction operating temperature range is -65°C to 175°C.
It is reported as RoHS3 Compliant, but this has not been verified.
The maximum drain current is 40A at case temperature (Tc).
The maximum on-resistance is 18mOhm at Vgs=10V and Id=20A.
The maximum gate threshold voltage is 3V at Id=250µA.