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NDB5060L The NDB5060L is an N-Channel MOSFET from On Semiconductor designed for low voltage applications. It offers a 60V drain-source voltage and 26A continuous current.
Mfr Part #:

NDB5060L

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NDB5060L is an N-Channel MOSFET from On Semiconductor designed for low voltage applications. It offers a 60V drain-source voltage and 26A continuous current.
✓ Total Stock: 1,600 pcs
$ Price Range: $0.99

NDB5060L Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request On Request On Request On Request
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NDB5060L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NDB5060L Description

Short technical summary and product information.

The NDB5060L is a logic level N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It utilizes a high cell density DMOS technology to achieve low on-state resistance and superior switching performance.

 

Key electrical specifications include a drain-source voltage (Vdss) of 60V, a continuous drain current of 26A at 25°C, and a maximum power dissipation of 68W. The Rds(on) is rated at 35mOhm at 13A with a 10V gate-source voltage, and 50mOhm at 26A with a 5V gate-source voltage. The input capacitance (Ciss) is 840pF at 30V, and the gate charge (Qg) is 24nC at 5V.

 

This MOSFET operates within a temperature range of -65°C to 175°C. It features a rugged internal source-drain diode, eliminating the need for an external transient suppressor in many applications. The device is designed for low-voltage applications such as automotive, DC-DC converters, and PWM motor controls.

 

The NDB5060L is available in a D2PAK (TO-263) surface mount package, suitable for both through-hole and surface mount applications.

NDB5060L Quick Information

Product Type: MOSFET
Canonical Name: NDB5060L N-Channel Logic Level Enhancement Mode Power Field Effect Transistor
Subcategory: N-Channel

NDB5060L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDB5060L Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDB5060L Features

  • 60V drain-source voltage rating.
  • 26A continuous drain current.
  • Low Rds(on) of 35mOhm at 13A/10V.
  • Surface mount D2PAK package.
  • Logic level gate drive capability.

NDB5060L Applications

  • Suitable for DC-DC converters.
  • Used in PWM motor control circuits.
  • Ideal for battery powered applications.
  • Designed for automotive systems.

NDB5060L FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NDB5060L?

The drain-source voltage (Vdss) for the NDB5060L is 60V.

What is the continuous current rating of the NDB5060L MOSFET?

The NDB5060L has a continuous current rating of 26A at 25°C.

What is the Rds(on) of the NDB5060L at 10V gate drive?

The Rds(on) is a maximum of 35mOhm at 13A with a 10V gate-source voltage.

What is the operating temperature range for the NDB5060L?

The operating and storage temperature range is -65°C to 175°C.

What package type is the NDB5060L available in?

The NDB5060L is available in a D2PAK (TO-263) surface mount package.

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