| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This high voltage N-channel Power MOSFET, the STMicroelectronics STW56N65DM2, is part of the MDmesh™ DM2 fast recovery diode series. It offers a 650V drain-source voltage and a maximum continuous drain current of 48A at 25°C.
Key electrical characteristics include a low on-resistance of 65mΩ maximum at 24A and 10V gate drive, a gate charge of 88 nC maximum, and an input capacitance of 4100 pF maximum. The device also boasts a high dv/dt ruggedness of 50 V/ns.
Designed for demanding high-efficiency converters, bridge topologies, and ZVS phase-shift converters, this MOSFET is housed in a TO-247-3 package suitable for through-hole mounting. Its thermal dissipation is rated at 360W maximum at 25°C case temperature, with a junction-to-case thermal resistance of 0.35 °C/W.
The STW56N65DM2 is 100% avalanche tested and features a fast-recovery body diode, extremely low gate charge, and low on-resistance, making it ideal for switching applications requiring high efficiency and ruggedness.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating (Vdss) is 650V.
The STW56N65DM2 is available in a TO-247-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The maximum gate charge is 88nC at Vgs = 10V.
The single-pulse avalanche energy is 1300mJ at starting Tj = 25°C.
The maximum on-resistance is 65mΩ at Id = 24A and Vgs = 10V.
The continuous drain current is 48A at Tcase = 25°C and 30A at Tcase = 100°C.