STB10LN80K5 The STMicroelectronics STB10LN80K5 is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-to-source voltage and an 8A current rating.
Mfr Part #:

STB10LN80K5

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STB10LN80K5 is an N-Channel MOSFET designed for high voltage applications. It features an 800V drain-to-source voltage and an 8A current rating.
✓ Total Stock: 1,579 pcs
$ Price Range: $2.56

STB10LN80K5 Available from 3 distributors

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✓ Non-Authorised
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
415 pcs
415 pcs On Request 1 On Request On Request 16+ On Request On Request
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164 pcs
164 pcs On Request 1 On Request On Request 16+ On Request On Request

STB10LN80K5 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STB10LN80K5 Description

Short technical summary and product information.

The STMicroelectronics STB10LN80K5 is a single N-Channel MOSFET from the MOSFET (Metal Oxide) technology family. It is designed for high-voltage applications, offering a maximum drain-to-source voltage (Vdss) of 800V and a continuous drain current of 8A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 630mOhm at 4A and 10V, a gate charge (Qg) of 15nC at 10V, and an input capacitance (Ciss) of 427pF at 100V. The gate threshold voltage (Vgs(th)) is 5V at 100µA, with a maximum gate-source voltage (Vgs) limit of ±30V.

 

This MOSFET is housed in a surface-mount D2PAK (TO-263) package, specifically TO-263-3, D²Pak (2 Leads + Tab), TO-263AB. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 110W (Tc).

 

The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH Status is Unaffected. However, these compliance details are from the existing database with low confidence and are not verified by external documents.

STB10LN80K5 Quick Information

Product Type: MOSFET
Canonical Name: STMicroelectronics STB10LN80K5 N-Channel MOSFET
Subcategory: N-Channel

STB10LN80K5 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STB10LN80K5 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STB10LN80K5 Features

  • 800V drain-to-source voltage rating.
  • 8A continuous drain current.
  • 630mOhm maximum on-resistance.
  • Surface mount D2PAK package.
  • Wide operating temperature range.

STB10LN80K5 Applications

  • Suitable for high-voltage switching.
  • Power supply applications.
  • Motor control circuits.
  • General purpose power switching.

STB10LN80K5 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the STB10LN80K5?

The maximum drain-source voltage is 800V.

What is the package type of the STB10LN80K5?

The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, also known as D²PAK.

What is the operating temperature range of the STB10LN80K5?

The operating temperature range is -55°C to 150°C (junction temperature).

What is the continuous drain current rating?

The continuous drain current is 8A at case temperature Tc.

What is the maximum on-resistance?

The maximum on-resistance is 630mOhm at 4A drain current and 10V gate-source voltage.

What is the gate charge of the STB10LN80K5?

The gate charge is 15nC at 10V gate-source voltage.

What is the input capacitance?

The input capacitance is 427pF at 100V drain-source voltage.

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