What are Transistors - FETs, MOSFETs - Single ?
Transistors - FETs, MOSFETs - Single are semiconductor devices that control the flow of electrical current in a circuit. They are commonly used in applications such as industrial power management and production electronics assembly. Important specifications for selection include Current, which determines the load capacity; Drain to Source Voltage (Vdss), which affects the voltage handling capability; and Drive Voltage (Max Rds On, Min Rds On), which influences efficiency and heat generation. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
Parts in this category
Tap rows to select parts
Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics
|
61
|
Price on request
61
|
14.6A (Tc) | 500 V | 10V | - | N-Channel | 80 nC @ 10 V | 3400 pF @ 25 V | Through Hole | 150°C (TJ) | 190W (Tc) | 360mOhm @ 7.5A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Vishay
|
61
|
Price on request
61
|
40A (Tc) | 20 V | 2.5V, 10V | - | P-Channel | 225 nC @ 10 V | 6600 pF @ 10 V | Surface Mount | -50°C ~ 150°C (TJ) | 4.8W (Ta), 57W (Tc) | 3.6mOhm @ 20A, 10V | PowerPAK® 1212-8S | MOSFET (Metal Oxide) | ±12V | 1.1V @ 250µA | |
Vishay
|
61
|
Price on request
61
|
2A (Tc) | 600 V | 10V | - | N-Channel | 18 nC @ 10 V | 350 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 2.5W (Ta), 42W (Tc) | 4.4Ohm @ 1.2A, 10V | TO-251AA | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
|
60
|
Price on request
60
|
30A (Tc) | 60 V | 4V, 5V | - | N-Channel | 35 nC @ 5 V | 1600 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 88W (Tc) | 50mOhm @ 18A, 5V | TO-220AB | MOSFET (Metal Oxide) | ±10V | 2V @ 250µA | |
|
STMicroelectronics
|
60
|
Price on request
60
|
22A (Tc) | 650 V | 10V | - | N-Channel | 64 nC @ 10 V | 2880 pF @ 100 V | Through Hole | 150°C (TJ) | 140W (Tc) | 139mOhm @ 11A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 5V @ 250µA | |
IXYS
|
60
|
Price on request
60
|
160A (Tc) | 100 V | 10V | - | N-Channel | 132 nC @ 10 V | 6600 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 430W (Tc) | 7mOhm @ 25A, 10V | TO-247 (IXTH) | MOSFET (Metal Oxide) | ±30V | 4.5V @ 250µA | |
Infineon Technologies
|
60
|
Price on request
60
|
13A (Tc) | 100 V | 10V | - | P-Channel | 58 nC @ 10 V | 760 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 66W (Tc) | 205mOhm @ 7.8A, 10V | D-Pak | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
60
|
Price on request
60
|
48A (Tc) | 60 V | 10V | - | N-Channel | 60 nC @ 10 V | 1360 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 110W (Tc) | 23mOhm @ 29A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Toshiba
|
60
|
Price on request
60
|
15.8A (Ta) | 600 V | 10V | - | N-Channel | 38 nC @ 10 V | 1350 pF @ 300 V | Through Hole | 150°C (TJ) | 40W (Tc) | 190mOhm @ 7.9A, 10V | TO-220SIS | MOSFET (Metal Oxide) | ±30V | 3.7V @ 790µA | |
Vishay
|
60
|
Price on request
60
|
40A (Tc) | 20 V | 4.5V, 10V | - | N-Channel | 12 nC @ 4.5 V | 1000 pF @ 10 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.75W (Ta), 83W (Tc) | 12mOhm @ 20A, 10V | TO-263 (D²Pak) | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
|
Infineon Technologies
|
60
|
Price on request
60
|
19.2A (Ta), 163A (Tc) | 120 V | 8V, 10V | - | N-Channel | 58 nC @ 10 V | 4300 pF @ 60 V | Surface Mount | -55°C ~ 175°C (TJ) | 3W (Ta), 214W (Tc) | 3.7mOhm @ 50A, 10V | PG-TDSON-8 FL | MOSFET (Metal Oxide) | ±20V | 3.6V @ 111µA | |
Infineon Technologies
|
60
|
Price on request
60
|
40A (Tc) | 80 V | 6V, 10V | - | N-Channel | 25 nC @ 10 V | 1820 pF @ 40 V | Surface Mount | -55°C ~ 150°C (TJ) | 63W (Tc) | 8.4mOhm @ 20A, 10V | PG-TSDSON-8-FL | MOSFET (Metal Oxide) | ±20V | 3.8V @ 31µA | |
STMicroelectronics
|
60
|
Price on request
60
|
45A (Tc) | 600 V | 10V | - | N-Channel | 150 nC @ 10 V | 4800 pF @ 50 V | Through Hole | 150°C (TJ) | 300W (Tc) | 60mOhm @ 22.5A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
Toshiba
|
60
|
Price on request
60
|
12A (Ta) | 600 V | 10V | - | N-Channel | 14 nC @ 10 V | 720 pF @ 10 V | Through Hole | 150°C (TJ) | 144W (Tc) | 400mOhm @ 6A, 10V | TO-3P(N) | MOSFET (Metal Oxide) | ±30V | 5V @ 1mA | |
ALPHA & OMEGA SEMICONDU CTOR
|
59
|
Price on request
59
|
500mA (Ta) | 20 V | 1.8V, 4.5V | - | N-Channel | 1 nC @ 4.5 V | 45 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 280mW (Ta) | 550mOhm @ 500mA, 4.5V | SC-89-3 | MOSFET (Metal Oxide) | ±8V | 1V @ 250µA | |
|
Infineon Technologies
|
58
|
Price on request
58
|
9A (Tc) | 950 V | 10V | - | N-Channel | 23 nC @ 10 V | 712 pF @ 400 V | Surface Mount | -55°C ~ 150°C (TJ) | 73W (Tc) | 750mOhm @ 4.5A, 10V | PG-TO252-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 220µA | |
|
Vishay
|
58
|
Price on request
58
|
90A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 257 nC @ 10 V | 12065 pF @ 15 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.75W (Ta), 250W (Tc) | 2.2mOhm @ 32A, 10V | TO-263 (D²Pak) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Infineon Technologies
|
58
|
Price on request
58
|
17A (Tc) | 100 V | 4V, 10V | - | N-Channel | 34 nC @ 5 V | 800 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 79W (Tc) | 100mOhm @ 9A, 10V | D2PAK | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
On Semiconductor
|
58
|
Price on request
58
|
15.5A (Ta) | 60 V | 5V | - | P-Channel | 26 nC @ 5 V | 1190 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 65W (Tc) | 150mOhm @ 7.5A, 5V | DPAK | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
On Semiconductor
|
56
|
Price on request
56
|
19A (Tc) | 650 V | 10V | - | N-Channel | 35 nC @ 10 V | 1415 pF @ 400 V | Through Hole | -55°C ~ 150°C (TJ) | 35W (Tc) | 165mOhm @ 9.5A, 10V | TO-220F-3 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 410µA | |
EPC
|
53
|
Price on request
53
|
18A (Ta) | 100 V | 5V | - | N-Channel | 4 nC @ 5 V | 407 pF @ 50 V | Surface Mount | -40°C ~ 150°C (TJ) | - | 13.5mOhm @ 11A, 5V | Die | GaNFET (Gallium Nitride) | +6V, -4V | 2.5V @ 3mA | |
On Semiconductor
|
53
|
Price on request
53
|
3.5A (Tc) | 900 V | 10V | - | N-Channel | 33 nC @ 10 V | 650 pF @ 30 V | Through Hole | -55°C ~ 150°C (TJ) | 2W (Ta), 35W (Tc) | 3.6Ohm @ 2.5A, 10V | TO-220F-3FS | MOSFET (Metal Oxide) | ±30V | - | |
Vishay
|
52
|
Price on request
52
|
5.7A (Ta) | 100 V | 6V, 10V | - | N-Channel | 44 nC @ 10 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.9W (Ta) | 25mOhm @ 9.3A, 10V | PowerPAK® SO-8 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Texas Instruments
|
52
|
Price on request
52
|
33A (Ta), 100A (Tc) | 25 V | 3V, 8V | - | N-Channel | 25 nC @ 4.5 V | 4000 pF @ 12.5 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.1W (Ta) | 2mOhm @ 30A, 8V | 8-VSON-CLIP (5x6) | MOSFET (Metal Oxide) | +10V, -8V | 1.4V @ 250µA | |
|
Vishay
|
52
|
Price on request
52
|
5.2A (Tc) | 200 V | 10V | - | N-Channel | 14 nC @ 10 V | 260 pF @ 25 V | Through Hole | -65°C ~ 150°C (TJ) | 50W (Tc) | 800mOhm @ 3.1A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Vishay
|
52
|
Price on request
52
|
2.5A (Tc) | 500 V | 10V | - | N-Channel | 24 nC @ 10 V | 360 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 3.1W (Ta), 50W (Tc) | 3Ohm @ 1.5A, 10V | I2PAK | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
51
|
Price on request
51
|
19A (Tc) | 100 V | 5V, 10V | - | N-Channel | 18 nC @ 5 V | 870 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 75W (Tc) | 100mOhm @ 9.5A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
|
Vishay
|
51
|
Price on request
51
|
14A (Tc) | 500 V | 10V | - | N-Channel | 150 nC @ 10 V | 2600 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 190W (Tc) | 400mOhm @ 8.4A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Toshiba
|
51
|
Price on request
51
|
4A (Ta) | 30 V | 1.8V, 4.5V | - | N-Channel | 2.2 nC @ 4.5 V | 200 pF @ 10 V | Surface Mount | 150°C | 2W (Ta) | 56mOhm @ 2A, 4.5V | SOT-23F | MOSFET (Metal Oxide) | +12V, -8V | 1V @ 1mA | |
IXYS
|
51
|
Price on request
51
|
76A (Tc) | 100 V | 10V | - | P-Channel | 197 nC @ 10 V | 13700 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 298W (Tc) | 25mOhm @ 38A, 10V | TO-263 (D2Pak) | MOSFET (Metal Oxide) | ±15V | 4V @ 250µA | |
|
Infineon Technologies
|
51
|
Price on request
51
|
6A (Tc) | 800 V | 10V | - | N-Channel | 41 nC @ 10 V | 785 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 83W (Tc) | 900mOhm @ 3.8A, 10V | PG-TO220-3 | MOSFET (Metal Oxide) | ±20V | 3.9V @ 250µA | |
|
UnitedSiC
|
50
|
Price on request
50
|
54A (Tc) | 650 V | 12V | - | N-Channel | 43 nC @ 12 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 175°C (TJ) | 326W (Tc) | 52mOhm @ 40A, 12V | TO-247-4 | - | ±25V | 6V @ 10mA | |
STMicroelectronics
|
50
|
Price on request
50
|
17.5A (Tc) | 950 V | 10V | - | N-Channel | 40 nC @ 10 V | 1500 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 250W (Tc) | 330mOhm @ 9A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 5V @ 100µA | |
|
On Semiconductor
|
50
|
Price on request
50
|
3.8A (Tc) | 200 V | 5V, 10V | - | N-Channel | 5.2 nC @ 5 V | 310 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 45W (Tc) | 1.35Ohm @ 1.9A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
IXYS
|
50
|
Price on request
50
|
48A (Tc) | 500 V | 10V | - | N-Channel | 330 nC @ 10 V | 9400 pF @ 25 V | Through Hole | -40°C ~ 150°C (TJ) | 400W (Tc) | 90mOhm @ 27.5A, 10V | ISOPLUS247™ | MOSFET (Metal Oxide) | ±20V | 4.5V @ 8mA | |
Texas Instruments
|
50
|
Price on request
50
|
65A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 3.4 nC @ 4.5 V | 506 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 3W (Ta) | 10.8mOhm @ 11A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
Infineon Technologies
|
50
|
Price on request
50
|
4A (Tc) | 800 V | 10V | - | N-Channel | 10 nC @ 10 V | 250 pF @ 500 V | Through Hole | -55°C ~ 150°C (TJ) | 24W (Tc) | 1.4Ohm @ 1.4A, 10V | PG-TO220-3-31 Full Pack | MOSFET (Metal Oxide) | ±20V | 3.5V @ 70µA | |
|
On Semiconductor
|
50
|
Price on request
50
|
164A (Tc) | 75 V | 10V | - | N-Channel | 152 nC @ 10 V | 9415 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 268W (Tc) | 4.7mOhm @ 80A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4.5V @ 250µA | |
|
Vishay
|
50
|
Price on request
50
|
23A (Tc) | 400 V | 10V | - | N-Channel | 210 nC @ 10 V | 4500 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 280W (Tc) | 200mOhm @ 14A, 10V | TO-247AC | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
|
Vishay
|
50
|
Price on request
50
|
5.6A (Tc) | 100 V | 10V | - | N-Channel | 8.3 nC @ 10 V | 180 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 43W (Tc) | 540mOhm @ 3.4A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
IXYS
|
50
|
Price on request
50
|
480A (Tc) | 75 V | 10V | - | N-Channel | 545 nC @ 10 V | 41000 pF @ 25 V | Chassis Mount | -55°C ~ 175°C (TJ) | 940W (Tc) | 1.9mOhm @ 100A, 10V | SOT-227B | MOSFET (Metal Oxide) | ±20V | 5V @ 8mA | |
Diodes Incorporated
|
50
|
Price on request
50
|
4A (Tc) | 650 V | 10V | - | N-Channel | 13.5 nC @ 10 V | 900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 8.35W (Ta) | 3Ohm @ 2A, 10V | ITO-220AB | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Renesas
|
50
|
Price on request
50
|
45A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 27 nC @ 4.5 V | 4300 pF @ 10 V | Surface Mount | 150°C (TJ) | 55W (Tc) | 2.7mOhm @ 22.5A, 10V | LFPAK | MOSFET (Metal Oxide) | ±20V | - | |
|
Toshiba
|
50
|
Price on request
50
|
13.7A (Ta) | 650 V | 10V | - | N-Channel | 40 nC @ 10 V | 1300 pF @ 300 V | Through Hole | 150°C (TJ) | 40W (Tc) | 300mOhm @ 6.9A, 10V | TO-220SIS | MOSFET (Metal Oxide) | ±30V | 4.5V @ 690µA | |
On Semiconductor
|
50
|
Price on request
50
|
100A (Ta) | 60 V | 4V, 10V | - | N-Channel | 220 nC @ 10 V | 12500 pF @ 20 V | Through Hole | 150°C (TJ) | 1.75W (Ta), 90W (Tc) | 5mOhm @ 50A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | - | |
On Semiconductor
|
50
|
Price on request
50
|
22A (Ta), 135A (Tc) | 80 V | 4.5V, 10V | - | N-Channel | 64 nC @ 10 V | 3844 pF @ 40 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.8W (Ta), 140W (Tc) | 3.2mOhm @ 20A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2V @ 190µA | |
|
Infineon Technologies
|
50
|
Price on request
50
|
77A (Tc) | 20 V | 2.8V, 10V | - | N-Channel | 35 nC @ 4.5 V | 2410 pF @ 10 V | Surface Mount | -55°C ~ 175°C (TJ) | 88W (Tc) | 8.5mOhm @ 15A, 10V | D2PAK | MOSFET (Metal Oxide) | ±12V | 2V @ 250µA | |
|
STMicroelectronics
|
50
|
Price on request
50
|
6.5A (Tc) | 800 V | 10V | - | N-Channel | 18 nC @ 10 V | 620 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 90W (Tc) | 1.05Ohm @ 3.25A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
|
On Semiconductor
|
50
|
Price on request
50
|
6.9A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 15 nC @ 4.5 V | 735 pF @ 24 V | Surface Mount | -55°C ~ 150°C (TJ) | 1W (Ta) | 13mOhm @ 10A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Infineon Technologies
|
50
|
Price on request
50
|
18A (Tc) | 200 V | 10V | - | N-Channel | 29 nC @ 10 V | 1200 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 100W (Tc) | 105mOhm @ 11A, 10V | TO-262 | MOSFET (Metal Oxide) | ±20V | 4.9V @ 100µA |
Showing 7601-7650 of 41,316 products