| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,680 pcs
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1680 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR4620PBF is an N-Channel enhancement mode MOSFET designed for high efficiency power switching applications. It is built with HEXFET technology and offers a drain-source voltage (Vdss) of 200V and continuous drain current of 24A at Tc=25°C. The device features a low typical on-resistance of 64mOhm and maximum of 78mOhm at Vgs=10V and Id=15A.
Gate charge characteristics include a total gate charge of 38nC maximum at Vgs=10V, with typical gate-to-source charge of 8.2nC and gate-to-drain charge of 7.9nC. The MOSFET is capable of handling high switching speeds with typical turn-on delay of 13.4ns and rise time of 22.4ns. It also features enhanced body diode dV/dt and dI/dt capability.
The device is housed in a surface mount TO-252-3 (DPak) package with gull wing leads and is rated for operation from -55°C to 175°C junction temperature. Maximum power dissipation is 144W at Tc=25°C. The IRFR4620PBF is suitable for applications such as synchronous rectification in SMPS, uninterruptible power supplies, and high speed power switching circuits.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 24A at Tc=25°C and 17A at Tc=100°C.
The typical on-resistance is 64mOhm and maximum is 78mOhm at Vgs=10V and Id=15A.
It is available in a surface mount TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 175°C.
The RoHS status is listed as RoHS3 compliant but is unverified. The datasheet mentions lead-free benefits.
The gate threshold voltage (Vgs(th)) ranges from 3V minimum to 5V maximum at Id=100µA.