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IPW60R160C6 N-Channel MOSFET rated for 600V drain-source voltage and 23.8A continuous drain current. Features 160mOhm on-resistance at 10V gate drive.
Mfr Part #:

IPW60R160C6

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 600V drain-source voltage and 23.8A continuous drain current. Features 160mOhm on-resistance at 10V gate drive.
Total Stock: 1,680 pcs

IPW60R160C6 Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
480 pcs
480 pcs On Request 1 On Request On Request 21+ On Request On Request

IPW60R160C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPW60R160C6 Description

Short technical summary and product information.

The IPW60R160C6 is an N-Channel power MOSFET from Infineon Technologies. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V and continuous drain current of 23.8A at case temperature.

 

Key electrical characteristics include a maximum on-resistance of 160mOhm at 11.3A drain current and 10V gate drive. The gate threshold voltage is 3.5V at 750µA. The device has a maximum gate charge of 75nC at 10V and input capacitance of 1660pF at 100V drain-source voltage.

 

The MOSFET is through-hole mounted in a TO-247-3 package (supplier package PG-TO247-3-41). It can dissipate up to 176W at case temperature. Operating junction temperature range is -55°C to 150°C.

 

This device is suitable for power supply, motor control, and other high-efficiency switching applications. It is RoHS3 compliant and has MSL 1 (unlimited) moisture sensitivity level.

IPW60R160C6 Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: IPW60R160C6 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

IPW60R160C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPW60R160C6 Features

  • 600V drain-source breakdown voltage.
  • 23.8A continuous drain current rating.
  • 160mOhm on-resistance at 10V gate drive.
  • Through-hole TO-247-3 package.
  • RoHS3 compliant and MSL 1 rated.

IPW60R160C6 Applications

  • High-voltage power supply switching circuits.
  • Motor control and inverter applications.
  • Power factor correction (PFC) circuits.
  • DC-DC converter and adapter designs.

IPW60R160C6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

600V.

What package does the IPW60R160C6 come in?

TO-247-3 (PG-TO247-3-41).

What is the operating junction temperature range?

-55°C to 150°C.

Is the IPW60R160C6 RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the maximum drain current?

23.8A at case temperature.

What is the gate threshold voltage?

3.5V at 750µA drain current.

What is the on-resistance?

160mOhm maximum at 11.3A and 10V gate drive.

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