| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,670 pcs
|
1670 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPP65R045C7XKSA1 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS C7 family. It is designed for high-voltage switching applications with a maximum drain-source voltage of 650V and continuous drain current of 46A at case temperature.
Key electrical characteristics include a maximum on-resistance of 45 mOhm at 24.9A and 10V gate drive, a typical gate charge of 93 nC, and input capacitance of 4340 pF at 400V. The device can dissipate up to 227W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a standard TO-220-3 through-hole package (PG-TO220-3), suitable for easy mounting on heatsinks. It is suitable for applications such as PFC stages, hard switching PWM stages in computing, server, telecom, UPS, and solar inverters.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.00 | $12.00 |
| 10+ | $8.31 | $8.31 |
| 50+ | $6.73 | $6.73 |
| 100+ | $6.23 | $6.23 |
| 500+ | $5.35 | $5.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
TO-220-3 (PG-TO220-3).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
46A at case temperature.
45 mOhm at 24.9A and 10V gate drive.
93 nC at 10V.