| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
126 pcs
|
126 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI7129DN-T1-GE3 is a P-Channel MOSFET designed for various switching applications. It features a maximum drain-source voltage of 30V and a continuous drain current rating of 35A at 25°C case temperature.
This MOSFET utilizes TrenchFET technology and is housed in a low-profile PowerPAK 1212-8 package, making it suitable for space-constrained designs. Key electrical characteristics include a low on-resistance of 11.4mOhm at 14.4A and 10V Vgs, and a gate charge of 71nC typical.
The device operates within a temperature range of -50°C to 150°C. It is surface-mounted and offers a maximum power dissipation of 52.1W at 25°C case temperature.
Applications include load switching and adapter switching, commonly found in notebook PCs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is -30 V.
The continuous drain current is -35 A at case temperature 25°C and -14.4 A at ambient temperature 25°C.
The maximum on-resistance is 11.4 mOhm at Vgs = 10 V and Id = 14.4 A.
It is available in a PowerPAK 1212-8 surface-mount package.
The operating junction temperature range is -50°C to 150°C.
The maximum gate threshold voltage is 2.8 V at Id = 250 µA.
Maximum power dissipation is 52.1 W at case temperature 25°C and 3.8 W at ambient temperature 25°C.