IXFN420N10T IXFN420N10T is an N-Channel power MOSFET from IXYS with 100V drain-source voltage and 420A continuous drain current. It features a low on-resistance of 2.3mOhm and is housed in a SOT-227B package.
Mfr Part #:

IXFN420N10T

Available from 1 distributors
Mfr Name: IXYS
IXYS
IXFN420N10T is an N-Channel power MOSFET from IXYS with 100V drain-source voltage and 420A continuous drain current. It features a low on-resistance of 2.3mOhm and is housed in a SOT-227B package.
Total Stock: 1,623 pcs
$ Price Range: $28.56 - $37.44

IXFN420N10T Available from 1 distributor

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IXFN420N10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IXFN420N10T Description

Short technical summary and product information.

The IXFN420N10T is an N-Channel enhancement-mode power MOSFET manufactured by IXYS using MOSFET technology. It is designed for high-current switching applications requiring low conduction losses.

 

Key electrical specifications include a drain-to-source voltage (Vdss) of 100V, a continuous drain current of 420A (at Tc), and a maximum drain-source on-resistance (Rds(on)) of 2.3mOhm at 60A and 10V gate drive. The device can dissipate up to 1070W (at Tc) and operates over a junction temperature range of -55°C to 175°C. Gate charge is 670nC and input capacitance is 47000pF.

 

The MOSFET is packaged in a SOT-227-4 (miniBLOC) case with a SOT-227B supplier device package, designed for chassis mount installation. This package provides high power handling capability and efficient thermal management.

IXFN420N10T Quick Information

Product Type: MOSFET
Canonical Name: IXFN420N10T N-Channel Power MOSFET, 100V, 420A, SOT-227B
Subcategory: Single MOSFET

IXFN420N10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IXFN420N10T Estimated Pricing

Qty Low High
1+ $37.44 $37.44
10+ $31.06 $31.06
100+ $28.56 $28.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

IXFN420N10T Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rated at 420A.
  • Low on-resistance of 2.3mOhm typical.
  • Chassis mount SOT-227B package.
  • Operates from -55°C to 175°C junction temperature.

IXFN420N10T Applications

  • Ideal for high-current power switching circuits.
  • Suitable for DC-DC converters and inverters.
  • Used in motor control and power supplies.
  • Applicable in battery management systems.

IXFN420N10T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IXFN420N10T?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current of the IXFN420N10T?

The continuous drain current is 420A at Tc.

What is the on-resistance of the IXFN420N10T?

The maximum on-resistance (Rds(on)) is 2.3mOhm at 60A and 10V gate drive.

What package does the IXFN420N10T come in?

The device is available in a SOT-227-4 (miniBLOC) package with a SOT-227B supplier device package, designed for chassis mount.

What is the operating temperature range of the IXFN420N10T?

The operating junction temperature range is -55°C to 175°C.

Is the IXFN420N10T RoHS compliant?

The part is listed as RoHS3 compliant.

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