| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,646 pcs
|
1646 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IXFH40N85X is an N-Channel MOSFET from IXYS, designed for high-voltage switching applications. It features a drain-source voltage rating of 850V and a continuous drain current of 40A at case temperature. The device offers a maximum on-resistance of 145 mOhm at 500mA drain current and 10V gate-source drive voltage.
With a gate charge of 98 nC and input capacitance of 3700 pF, this MOSFET is suitable for efficient switching in power conversion circuits. The maximum power dissipation is 860W, and the operating junction temperature range is -55°C to 150°C.
The IXFH40N85X is housed in a TO-247-3 package with through-hole mounting, providing robust thermal performance. It is a metal-oxide semiconductor technology device, ideal for use in power supplies, inverters, and motor drives.
| Qty | Low | High |
|---|---|---|
| 300+ | $10.80 | $10.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
850V.
40A at case temperature.
TO-247-3 (through-hole).
-55°C to 150°C (junction).
98 nC at 10V gate-source voltage.
3700 pF at 25V drain-source voltage.
145 mOhm at 500mA drain current and 10V gate-source voltage.